The Aharonov-Bohm-Fano interferometer as a spin-manipulating device
文献类型：期刊论文
| 作者 | W. J. Gong ; H. Li ; S. Zhang ; G. Z. Wei |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2011 |
| 卷号 | 109期号:7 |
| 关键词 | quantum-dot transport heterostructure antiresonance spintronics resonances coherence systems wells |
| ISSN号 | 0021-8979 |
| 中文摘要 | We studied the spin-polarized electron transport through a double quantum-dot (QD) Aharonov-Bohm-Fano (ABF) interferometer, by considering the spin bias in the source lead. It is found that the spin bias, via modulating the electron tunneling in the channel of strong QD-lead coupling, drives apparent charge and spin currents in the drain lead. Simultaneously, for the QD in the weak-coupling channel there appears striking spin-bias-induced spin accumulation, the characteristics of which are tightly dependent on the strengths of the intradot Coulomb interactions. Furthermore, when a charge bias is applied between the source and drain leads, the currents in the drain lead and the spin accumulation in the QD of the weak-coupling channel can be efficiently manipulated by the change of the charge bias amplitude, including the changes of the direction and amplitude of both the currents and spin accumulation. Based on all the obtained results, we propose such a structure to be a prototype of the spin-manipulating device. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3559270] |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/30351]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | W. J. Gong,H. Li,S. Zhang,et al. The Aharonov-Bohm-Fano interferometer as a spin-manipulating device[J]. Journal of Applied Physics,2011,109(7). |
| APA | W. J. Gong,H. Li,S. Zhang,&G. Z. Wei.(2011).The Aharonov-Bohm-Fano interferometer as a spin-manipulating device.Journal of Applied Physics,109(7). |
| MLA | W. J. Gong,et al."The Aharonov-Bohm-Fano interferometer as a spin-manipulating device".Journal of Applied Physics 109.7(2011). |
入库方式： OAI收割
来源：金属研究所
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