First-principles study on the electronic structure of dilute magnetic semiconductor Ga(1-x)Cr(x)P in zinc-blende phase
文献类型:期刊论文
作者 | H. M. Huang ; S. J. Luo ; K. L. Yao |
刊名 | Physica Status Solidi B-Basic Solid State Physics
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出版日期 | 2011 |
卷号 | 248期号:5页码:1258-1263 |
关键词 | dilute magnetic semiconductors density functional theory electron density of states GaCrP half-metallic ferromagnets heusler alloys doped gap spin gaas ge al si |
ISSN号 | 0370-1972 |
中文摘要 | We employ the full potential linearized augmented plane wave (FP-LAPW) method based on spin-polarized density functional theory (DFT) in order to investigate the structural, electronic, and magnetic properties of ordered dilute magnetic semiconductor (DMS) Ga(1-x)Cr(x)P in zinc-blende phase. The calculated electronic band structures and density of states of these DMSs are discussed. The results show that the ferromagnetic states are more favorable in energy than antiferromagnetic states. Ga(1-x)Cr(x)P for x = 0.125, 0.25, and 0.50 exhibits half-metallic (HM) characteristic with integral magnetic moment, and the sensitivity of half-metallicity of Ga(1-x)Cr(x)P as a function of lattice constant is also discussed. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
原文出处 | |
公开日期 | 2012-04-13 |
源URL | [http://210.72.142.130/handle/321006/30407] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | H. M. Huang,S. J. Luo,K. L. Yao. First-principles study on the electronic structure of dilute magnetic semiconductor Ga(1-x)Cr(x)P in zinc-blende phase[J]. Physica Status Solidi B-Basic Solid State Physics,2011,248(5):1258-1263. |
APA | H. M. Huang,S. J. Luo,&K. L. Yao.(2011).First-principles study on the electronic structure of dilute magnetic semiconductor Ga(1-x)Cr(x)P in zinc-blende phase.Physica Status Solidi B-Basic Solid State Physics,248(5),1258-1263. |
MLA | H. M. Huang,et al."First-principles study on the electronic structure of dilute magnetic semiconductor Ga(1-x)Cr(x)P in zinc-blende phase".Physica Status Solidi B-Basic Solid State Physics 248.5(2011):1258-1263. |
入库方式: OAI收割
来源:金属研究所
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