Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect
文献类型：期刊论文
| 作者 | T. Y. Kang ; Y. Y. Xiu ; C. Z. Liu ; L. Hui ; J. J. Wang ; W. P. Tong |
| 刊名 | Journal of Alloys and Compounds
 |
| 出版日期 | 2011 |
| 卷号 | 509期号:5页码:1785-1789 |
| 关键词 | Bi segregation Interconnect Kinetics Intermetallic compound growth lead-free solders cu |
| ISSN号 | 0925-8388 |
| 中文摘要 | There was a sudden increase of intermetallic compound (IMC) Cu(6)Sn(5) growth rate in the eutectic Sn58wt. %Bi/Cu joint during aging process. With aging time increasing, Bi accumulated at the Cu(3)Sn/Cu interface and gradually induced the fracture mode of the joint to change from ductile to brittle one along this interface. Bi segregation enhanced IMC Cu(6)Sn(5) growth by means of promoting the interfacial reaction at Cu(3)Sn/Cu interface, which was concluded from IMCs (Cu(6)Sn(5) and Cu(3)Sn) growth behavior for pure Sn/Cu and Sn10wt. %Bi/Cu interconnects at the same temperature. (C) 2010 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/30430]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | T. Y. Kang,Y. Y. Xiu,C. Z. Liu,et al. Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect[J]. Journal of Alloys and Compounds,2011,509(5):1785-1789. |
| APA | T. Y. Kang,Y. Y. Xiu,C. Z. Liu,L. Hui,J. J. Wang,&W. P. Tong.(2011).Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect.Journal of Alloys and Compounds,509(5),1785-1789. |
| MLA | T. Y. Kang,et al."Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect".Journal of Alloys and Compounds 509.5(2011):1785-1789. |
入库方式： OAI收割
来源：金属研究所
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