Temperature dependence of the exchange coupling in Co/SI(or Ge)/Fe trilayers
文献类型:期刊论文
作者 | X. H. Liu ; W. Liu ; S. Guo ; X. K. Lv ; W. J. Gong ; Z. D. Zhang |
刊名 | Physica B-Condensed Matter
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出版日期 | 2011 |
卷号 | 406期号:10页码:1969-1972 |
关键词 | Exchange coupling Trilayers Exchange bias field co/ge/co films fesi fe/si/fe cosi sandwiches anisotropy thickness spacer heat fege |
ISSN号 | 0921-4526 |
中文摘要 | The temperature dependences of interfacial exchange coupling in Co/semiconductor (SM)/Fe trilayers (SM Si or Ge) with different spacer thicknesses are investigated. Only one step is found in the third (not in the first) quadrant of the hysteresis loop of the trilayers with different SM thicknesses, which is ascribed to a larger interfacial coupling strength of Co/CoGe (or Co/CoSi) than of Fe/FeGe (or Fe/FeSi). Furthermore, in comparison with Co/Ge/Fe, a smaller exchange bias field HE and no clear step are observed in Co/Si/Fe, which may originate from the weaker interfacial coupling in this trilayer. The variation of coercivity H(C) with spacer thickness at low temperatures in Co/Ge/Fe is different from that in Co/Si/Fe, indicating again the important effect of the SM layer in the trilayers. (C) 2011 Elsevier B. V. All rights reserved. |
原文出处 | |
公开日期 | 2012-04-13 |
源URL | [http://210.72.142.130/handle/321006/30548] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | X. H. Liu,W. Liu,S. Guo,et al. Temperature dependence of the exchange coupling in Co/SI(or Ge)/Fe trilayers[J]. Physica B-Condensed Matter,2011,406(10):1969-1972. |
APA | X. H. Liu,W. Liu,S. Guo,X. K. Lv,W. J. Gong,&Z. D. Zhang.(2011).Temperature dependence of the exchange coupling in Co/SI(or Ge)/Fe trilayers.Physica B-Condensed Matter,406(10),1969-1972. |
MLA | X. H. Liu,et al."Temperature dependence of the exchange coupling in Co/SI(or Ge)/Fe trilayers".Physica B-Condensed Matter 406.10(2011):1969-1972. |
入库方式: OAI收割
来源:金属研究所
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