Analysis on the process of ZAO films by DC magnetron reactive sputtering
文献类型：期刊论文
| 作者 | F. Lu ; C. H. Xu ; L. S. Wen |
| 刊名 | Science China-Technological Sciences
 |
| 出版日期 | 2011 |
| 卷号 | 54期号:1页码:28-32 |
| 关键词 | ZAO film resistivity transmissivity zno temperature |
| ISSN号 | 1674-7321 |
| 中文摘要 | The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure, optical and electrical properties was studied. Through optimizing the process parameters, an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films, the resistivity of the ZAO film is as low as 4.5x10(-4) Omega.cm and the average transmissivity in the visible region is around 80%, the optical and electrical properties meet the application requirements. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/30557]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | F. Lu,C. H. Xu,L. S. Wen. Analysis on the process of ZAO films by DC magnetron reactive sputtering[J]. Science China-Technological Sciences,2011,54(1):28-32. |
| APA | F. Lu,C. H. Xu,&L. S. Wen.(2011).Analysis on the process of ZAO films by DC magnetron reactive sputtering.Science China-Technological Sciences,54(1),28-32. |
| MLA | F. Lu,et al."Analysis on the process of ZAO films by DC magnetron reactive sputtering".Science China-Technological Sciences 54.1(2011):28-32. |
入库方式： OAI收割
来源：金属研究所
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