Effects of Bi segregation on the tensile properties of Cu/Cu(3)Sn(100) interface
文献类型：期刊论文
| 作者 | X. Y. Pang ; Z. Q. Liu ; S. Q. Wang ; J. K. Shang |
| 刊名 | Microelectronics Reliability
 |
| 出版日期 | 2011 |
| 卷号 | 51期号:12页码:2330-2335 |
| 关键词 | crack-growth-behavior lead-free solders alpha-al2o3(0001)/cu(111) interface mechanical strength reactive interface molecular-dynamics joints cu3sn cu 1st-principles |
| ISSN号 | 0026-2714 |
| 中文摘要 | The relaxed-type tensile processes of the clean and Bi segregated Cu/Cu(3)Sn(1 0 0) interfaces were investigated by the ab initio calculations based on the density functional theory. Fracture occurs at the Cu/Cu(3)Sn interface which has the lowest adhesion energy and tensile strength compared to the Cu/Cu and Cu(3)Sn/Cu(3)Sn interlayers. The theoretical tensile strength of the clean interface is 8.04 GPa, while that of 10% Bi segregated interface drops to 4.72 GPa. According to the atomic and electronic analyzes during tensile test, failure originates from the break of interfacial bonding and the extension of charge depletion region through the interface, when the supercell stretching exceeds the critical tensile strain of 12% for clean interface and 9.5% for Bi segregated interface. Large Bi atom not only introduces interfacial distortion but also reduces the hybridization of surrounding Cu and Sn atoms, which cause the weakening of interfacial mechanical strength of SnBi solder joints. (C) 2011 Elsevier Ltd. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/30615]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. Y. Pang,Z. Q. Liu,S. Q. Wang,et al. Effects of Bi segregation on the tensile properties of Cu/Cu(3)Sn(100) interface[J]. Microelectronics Reliability,2011,51(12):2330-2335. |
| APA | X. Y. Pang,Z. Q. Liu,S. Q. Wang,&J. K. Shang.(2011).Effects of Bi segregation on the tensile properties of Cu/Cu(3)Sn(100) interface.Microelectronics Reliability,51(12),2330-2335. |
| MLA | X. Y. Pang,et al."Effects of Bi segregation on the tensile properties of Cu/Cu(3)Sn(100) interface".Microelectronics Reliability 51.12(2011):2330-2335. |
入库方式： OAI收割
来源：金属研究所
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