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Preparation of graphene by chemical vapor deposition
文献类型:期刊论文
作者 | W. C. Ren ; L. B. Gao ; L. P. Ma ; H. M. Cheng |
刊名 | New Carbon Materials
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出版日期 | 2011 |
卷号 | 26期号:1页码:71-80 |
关键词 | Graphene Preparation Chemical vapor deposition Transfer few-layer graphene epitaxial graphene large-area carbon films surfaces nickel phase |
ISSN号 | 1007-8827 |
中文摘要 | Chemical vapor deposition (CVD) is an effective way for the preparation of graphene with large area and high quality. In this review, the mechanism and characteristics of the four main preparation methods of graphene are briefly introduced, including micromechanical cleavage, chemical exfoliation, SiC epitaxial growth and CVD. The recent advances in the CVD growth of graphene and the related transfer techniques in terms of structure control, quality improvement and large area graphene synthesis were discussed. Other possible methods for the CVD growth of graphene were analyzed including the synthesis and nondestructive transfer of large area single crystalline graphene, graphene nanoribbons and graphene macrostructures. |
原文出处 | |
公开日期 | 2012-04-13 |
源URL | [http://210.72.142.130/handle/321006/30637] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | W. C. Ren,L. B. Gao,L. P. Ma,et al. Preparation of graphene by chemical vapor deposition[J]. New Carbon Materials,2011,26(1):71-80. |
APA | W. C. Ren,L. B. Gao,L. P. Ma,&H. M. Cheng.(2011).Preparation of graphene by chemical vapor deposition.New Carbon Materials,26(1),71-80. |
MLA | W. C. Ren,et al."Preparation of graphene by chemical vapor deposition".New Carbon Materials 26.1(2011):71-80. |
入库方式: OAI收割
来源:金属研究所
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