中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
热门
Preparation of graphene by chemical vapor deposition

文献类型:期刊论文

作者W. C. Ren ; L. B. Gao ; L. P. Ma ; H. M. Cheng
刊名New Carbon Materials
出版日期2011
卷号26期号:1页码:71-80
关键词Graphene Preparation Chemical vapor deposition Transfer few-layer graphene epitaxial graphene large-area carbon films surfaces nickel phase
ISSN号1007-8827
中文摘要Chemical vapor deposition (CVD) is an effective way for the preparation of graphene with large area and high quality. In this review, the mechanism and characteristics of the four main preparation methods of graphene are briefly introduced, including micromechanical cleavage, chemical exfoliation, SiC epitaxial growth and CVD. The recent advances in the CVD growth of graphene and the related transfer techniques in terms of structure control, quality improvement and large area graphene synthesis were discussed. Other possible methods for the CVD growth of graphene were analyzed including the synthesis and nondestructive transfer of large area single crystalline graphene, graphene nanoribbons and graphene macrostructures.
原文出处://WOS:000288313600015
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/30637]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
W. C. Ren,L. B. Gao,L. P. Ma,et al. Preparation of graphene by chemical vapor deposition[J]. New Carbon Materials,2011,26(1):71-80.
APA W. C. Ren,L. B. Gao,L. P. Ma,&H. M. Cheng.(2011).Preparation of graphene by chemical vapor deposition.New Carbon Materials,26(1),71-80.
MLA W. C. Ren,et al."Preparation of graphene by chemical vapor deposition".New Carbon Materials 26.1(2011):71-80.

入库方式: OAI收割

来源:金属研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。