Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure
文献类型：期刊论文
| 作者 | J. C. Sun ; Q. J. Feng ; J. M. Bian ; D. Q. Yu ; M. K. Li ; C. R. Li ; H. W. Liang ; J. Z. Zhao ; H. Qiu ; G. T. Du |
| 刊名 | Journal of Luminescence
 |
| 出版日期 | 2011 |
| 卷号 | 131期号:4页码:825-828 |
| 关键词 | p-ZnO:N/n-GaN:Si hererojunction LED UV electroluminescence MOCVD chemical-vapor-deposition zinc-oxide n-zno nitrogen films fabrication substrate |
| ISSN号 | 0022-2313 |
| 中文摘要 | A p-ZnO:N/n-GaN:Si structure heterojunction light-emitting diode (LED) is fabricated on c-plane sapphire by full metal organic chemical vapor deposition (MOCVD) technique. The p-type layer with hole concentration of 8.94 x 10(16) cm(-3) is composed of nitrogen-doped ZnO using NH(3) as the doping source with subsequent annealing in N(2)O plasma ambient. Silicon-doped GaN film with electron concentration of 1.15 x 10(18) cm(-3) is used as the n-type layer. Desirable rectifying behavior is observed from the current-voltage (I-V) curve of the device. The forward turn on voltage is about 4 V and the reverse breakdown voltage is more than 7 V. A distinct ultraviolet (UV) electroluminescence (EL) with a dominant emission peak centered at 390 nm is detected at room temperature from the heterojunction structure under forward bias conditions. The origins of the EL emissions are discussed in comparison with the photoluminescence (PL) spectra. (C) 2010 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/30685]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | J. C. Sun,Q. J. Feng,J. M. Bian,et al. Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure[J]. Journal of Luminescence,2011,131(4):825-828. |
| APA | J. C. Sun.,Q. J. Feng.,J. M. Bian.,D. Q. Yu.,M. K. Li.,...&G. T. Du.(2011).Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure.Journal of Luminescence,131(4),825-828. |
| MLA | J. C. Sun,et al."Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure".Journal of Luminescence 131.4(2011):825-828. |
入库方式： OAI收割
来源：金属研究所
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