Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping
文献类型：期刊论文
| 作者 | Y. B. Tang ; X. H. Bo ; J. Xu ; Y. L. Cao ; Z. H. Chen ; H. S. Song ; C. P. Liu ; T. F. Hung ; W. J. Zhang ; H. M. Cheng ; I. Bello ; S. T. Lee ; C. S. Lee |
| 刊名 | Acs Nano
 |
| 出版日期 | 2011 |
| 卷号 | 5期号:5页码:3591-3598 |
| ISSN号 | 1936-0851 |
| 关键词 | aluminum nitride nanowire arrays Mg doping tunable p-type conductivity field-effect transistors aluminum nitride nanotubes molecular-beam epitaxy field-emission thin-films growth gan arrays nanostructures stability substrate |
| 中文摘要 | Arrays of well-aligned AlN nanowires (NWs) with tunable p-type conductivity were synthesized on Si(111) substrates using bis(cyclopentadienyl)magnesium (Cp(2)Mg) vapor as a doping source by chemical vapor deposition. The Mg-doped AlN NWs are single-crystalline and grow along the [001] direction. Gate-voltage-dependent transport measurements on field-effect transistors constructed from individual NWs revealed the transition from n-type conductivity in the undoped AlN NWs to p-type conductivity In the Mg-doped NWs. By adjusting the doping gas flow rate (0-10 sccm), the conductivity of AlN NWs can be tuned over 7 orders of magnitude from (3.8-8.5) x 10(-6) Omega(-1) cm(-1) for the undoped sample to 15.6-24.4 Omega(-1) cm(-1) for the Mg-doped AlN NWs. Hole concentration as high as 4.7 x 10(19) cm(-3) was achieved for the heaviest doping. In addition, the maximum hole mobility (similar to 6.4 cm(2)/V s) in p-type AlN NWs is much higher than that of Mg-doped AlN films (similar to 1.0 cm(2)/V s).(2) The realization of p-type AlN NWs with tunable electrical transport properties may open great potential in developing practical nanodevices such as deep-UV light-emitting diodes and photodetectors. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/30705]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Y. B. Tang,X. H. Bo,J. Xu,et al. Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping[J]. Acs Nano,2011,5(5):3591-3598. |
| APA | Y. B. Tang.,X. H. Bo.,J. Xu.,Y. L. Cao.,Z. H. Chen.,...&C. S. Lee.(2011).Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping.Acs Nano,5(5),3591-3598. |
| MLA | Y. B. Tang,et al."Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping".Acs Nano 5.5(2011):3591-3598. |
入库方式： OAI收割
来源：金属研究所
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