The formation of stacking fault tetrahedra in Al and Cu II. SFT growth by successive absorption of vacancies generated by dipole annihilation (vol 59, pg 10, 2011)
文献类型：期刊论文
| 作者 | H. Wang ; D. S. Xu ; R. Yang ; P. Veyssiere |
| 刊名 | Acta Materialia
 |
| 出版日期 | 2011 |
| 卷号 | 59期号:6页码:2563-2563 |
| ISSN号 | 1359-6454 |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/30722]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | H. Wang,D. S. Xu,R. Yang,et al. The formation of stacking fault tetrahedra in Al and Cu II. SFT growth by successive absorption of vacancies generated by dipole annihilation (vol 59, pg 10, 2011)[J]. Acta Materialia,2011,59(6):2563-2563. |
| APA | H. Wang,D. S. Xu,R. Yang,&P. Veyssiere.(2011).The formation of stacking fault tetrahedra in Al and Cu II. SFT growth by successive absorption of vacancies generated by dipole annihilation (vol 59, pg 10, 2011).Acta Materialia,59(6),2563-2563. |
| MLA | H. Wang,et al."The formation of stacking fault tetrahedra in Al and Cu II. SFT growth by successive absorption of vacancies generated by dipole annihilation (vol 59, pg 10, 2011)".Acta Materialia 59.6(2011):2563-2563. |
入库方式： OAI收割
来源：金属研究所
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