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The formation of stacking fault tetrahedra in Al and Cu III Growth by expanding ledges

文献类型:期刊论文

作者H. Wang ; D. S. Xu ; R. Yang ; P. Veyssiere
刊名Acta Materialia
出版日期2011
卷号59期号:1页码:19-29
关键词Stacking fault tetrahedron Growth Ledge mechanism Molecular dynamics simulations Shockley dipole vacancy clusters quenched gold fcc metals molecular-dynamics glissile dislocations irradiated materials elastic interaction point-defects part i copper
ISSN号1359-6454
中文摘要Ledge expansion and the concomitant growth of a stacking fault tetrahedron (SFT) are investigated in Al and Cu by molecular dynamics (MD) simulations by addition of vacancy rods with selected lengths Ledge expansion is largely governed by the site preference of vacancies on the SFT edges resulting in distinct stable ledged SFTs Both edge- and corner-facing ledge configurations may be adopted The growth of SFTs, especially large ones, is controlled by thermal agitation The mobile part of the ledges consists of a dipole of Shockley partials generally oriented in the 60 degrees mixed orientation that move in a thermally activated manner, reflecting a certain core reorganization of the Shockley dipole (C) 2010 Acta Materialia Inc Published by Elsevier Ltd All rights reserved
原文出处://WOS:000284789200003
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/30725]  
专题金属研究所_中国科学院金属研究所
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H. Wang,D. S. Xu,R. Yang,et al. The formation of stacking fault tetrahedra in Al and Cu III Growth by expanding ledges[J]. Acta Materialia,2011,59(1):19-29.
APA H. Wang,D. S. Xu,R. Yang,&P. Veyssiere.(2011).The formation of stacking fault tetrahedra in Al and Cu III Growth by expanding ledges.Acta Materialia,59(1),19-29.
MLA H. Wang,et al."The formation of stacking fault tetrahedra in Al and Cu III Growth by expanding ledges".Acta Materialia 59.1(2011):19-29.

入库方式: OAI收割

来源:金属研究所

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