Structural and microstructural analyses of crystalline Er(2)O(3) high-k films grown on Si (001) by laser molecular beam epitaxy
文献类型：期刊论文
| 作者 | X. Wang ; Y. L. Zhu ; M. He ; H. B. Lu ; X. L. Ma |
| 刊名 | Acta Materialia
 |
| 出版日期 | 2011 |
| 卷号 | 59期号:4页码:1644-1650 |
| ISSN号 | 1359-6454 |
| 关键词 | Thin films High-resolution electron microscopy Energy-filtered transmission microscopy Interface Dielectrics thin-films electrical-properties oxide-films silicon si(001) dielectrics interface |
| 中文摘要 | Erbium oxide (Er(2)O(3)) films are well regarded as being suited for high-k replacement of SiO(2) in endeavors to further miniaturize and enhance the performance of microelectronics. Er(2)O(3) films were deposited on Si (0 0 1) substrates by laser molecular beam epitaxy. The structures and microstructures of the films and the interfacial layers were characterized by means of X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results from the XRD and selected area electron diffractions of Er(2)O(3) films with thicknesses of 30 and 100 nm indicate that the films are polycrystalline, with dominant (1 1 1) textures of Er(2)O(3) (1 1 1) // Si (0 0 1). Amorphous layers dotted with small ordered islands were observed and confirmed to be located at the interfaces between the films and the Si substrates with dark-field image and high-resolution TEM. High-resolution Z-contrast imaging, energy dispersive X-ray spectroscopy and energy-filtered imaging were applied to identify the compositions of the interfacial layers. The salient feature is that the layers consist primarily of Er and O, with a very small amount of Si. This kind of Er-O-based interface layer may play a very important role in the electrical and optical properties of the films. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/30744]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. Wang,Y. L. Zhu,M. He,et al. Structural and microstructural analyses of crystalline Er(2)O(3) high-k films grown on Si (001) by laser molecular beam epitaxy[J]. Acta Materialia,2011,59(4):1644-1650. |
| APA | X. Wang,Y. L. Zhu,M. He,H. B. Lu,&X. L. Ma.(2011).Structural and microstructural analyses of crystalline Er(2)O(3) high-k films grown on Si (001) by laser molecular beam epitaxy.Acta Materialia,59(4),1644-1650. |
| MLA | X. Wang,et al."Structural and microstructural analyses of crystalline Er(2)O(3) high-k films grown on Si (001) by laser molecular beam epitaxy".Acta Materialia 59.4(2011):1644-1650. |
入库方式： OAI收割
来源：金属研究所
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