Current enhanced wettability of eutectic SnBi melt on Cu substrate
文献类型：期刊论文
| 作者 | Q. G. Xu ; X. B. Liu ; H. F. Zhang |
| 刊名 | Materials Science and Technology
 |
| 出版日期 | 2011 |
| 卷号 | 27期号:3页码:666-669 |
| 关键词 | Wetting Electromigration Alloys Interfacial reaction field |
| ISSN号 | 0267-0836 |
| 中文摘要 | The effect of a direct electric current on the wetting behaviour of eutectic SnBi melt on Cu substrate at 220 degrees C was investigated in the present study. It is found that the application of current enhanced the growth rate and lateral growth of interfacial reaction layer between eutectic SnBi melt and Cu substrate. Furthermore, with the increase in the current, the spread of eutectic SnBi melt on Cu is accelerated significantly and the steady state contact angle is decreased markedly. The reason for these is also discussed in the present paper. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/30800]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Q. G. Xu,X. B. Liu,H. F. Zhang. Current enhanced wettability of eutectic SnBi melt on Cu substrate[J]. Materials Science and Technology,2011,27(3):666-669. |
| APA | Q. G. Xu,X. B. Liu,&H. F. Zhang.(2011).Current enhanced wettability of eutectic SnBi melt on Cu substrate.Materials Science and Technology,27(3),666-669. |
| MLA | Q. G. Xu,et al."Current enhanced wettability of eutectic SnBi melt on Cu substrate".Materials Science and Technology 27.3(2011):666-669. |
入库方式： OAI收割
来源：金属研究所
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