High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3
文献类型：期刊论文
| 作者 | Z. B. Yan ; Y. Y. Guo ; G. Q. Zhang ; J. M. Liu |
| 刊名 | Advanced Materials
 |
| 出版日期 | 2011 |
| 卷号 | 23期号:11页码:1351-1355 |
| 关键词 | resistive-switching memory oxygen vacancies electronics |
| ISSN号 | 0935-9648 |
| 中文摘要 | Non-volatile memory cells using Co-doped BaTiO(3) as an active layer exhibit high-performance unipolar resistive switching characteristics, with a resistance ratio over 10(4), retention time longer than 7 x 10(4) s, endurance over 10(5) cycles, and switching speed less than 10 ns/70 ns for SET/RESET. Under high electric field and large Joule heating, the easily varied valence of Co ions, the preexisting oxygen vacancies with sufficiently high density, and the local itinerant electrons introduced by the Co-doping all favor the local metal-insulator phase transition and therein the formation/rupture of conductive filaments, contributing to the stable resistive switching. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/30814]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Z. B. Yan,Y. Y. Guo,G. Q. Zhang,et al. High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3[J]. Advanced Materials,2011,23(11):1351-1355. |
| APA | Z. B. Yan,Y. Y. Guo,G. Q. Zhang,&J. M. Liu.(2011).High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3.Advanced Materials,23(11),1351-1355. |
| MLA | Z. B. Yan,et al."High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3".Advanced Materials 23.11(2011):1351-1355. |
入库方式： OAI收割
来源：金属研究所
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