Inhibition of Electromigration in Eutectic SnBi Solder Interconnect by Plastic Prestraining
文献类型：期刊论文
| 作者 | X. F. Zhang ; H. Y. Liu ; J. D. Guo ; J. K. Shang |
| 刊名 | Journal of Materials Science & Technology
 |
| 出版日期 | 2011 |
| 卷号 | 27期号:11页码:1072-1076 |
| 关键词 | Electromigration Interfacial segregation Prestrain Dislocation Vacancy electric-current segregation bi |
| ISSN号 | 1005-0302 |
| 中文摘要 | Plastic prestraining was applied to a solder interconnect to introduce internal defects such as dislocations in order to investigate the interaction of dislocations with electromigration damage. Above a critical prestrain, Bi interfacial segregation to the anode, a clear indication of electromigration damage in SnBi solder interconnect, was effectively prevented. Such an inhibiting effect is apparently contrary to the common notion that dislocations often act as fast diffusion paths. It is suggested that the dislocations introduced by plastic prestraining acted as sinks for vacancies in the early stage of the electromigration process, but as the vacancies accumulated at the dislocations, climb of those dislocations prompted recovery of the deformed samples under current stressing, greatly decreasing the density Of dislocation And vacancy in the solder, leading to slower diffusion of Bi atoms. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/30922]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. F. Zhang,H. Y. Liu,J. D. Guo,et al. Inhibition of Electromigration in Eutectic SnBi Solder Interconnect by Plastic Prestraining[J]. Journal of Materials Science & Technology,2011,27(11):1072-1076. |
| APA | X. F. Zhang,H. Y. Liu,J. D. Guo,&J. K. Shang.(2011).Inhibition of Electromigration in Eutectic SnBi Solder Interconnect by Plastic Prestraining.Journal of Materials Science & Technology,27(11),1072-1076. |
| MLA | X. F. Zhang,et al."Inhibition of Electromigration in Eutectic SnBi Solder Interconnect by Plastic Prestraining".Journal of Materials Science & Technology 27.11(2011):1072-1076. |
入库方式： OAI收割
来源：金属研究所
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