中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Interfacial Microstructure and Growth Kinetics of Intermetallic Compound Layers in Sn-4 wt.%Ag/Cu-X (X = Zn, Ag, Sn) Couples

文献类型:期刊论文

作者H. F. Zou ; Q. K. Zhang ; Z. F. Zhang
刊名Journal of Electronic Materials
出版日期2011
卷号40期号:7页码:1542-1548
关键词Cu(3)Sn void Cu alloys intermetallic compound (IMC) interfacial reaction free solders mechanisms diffusion strength joints
ISSN号0361-5235
中文摘要In the current study, the interfacial microstructures of Sn-Ag/Cu-X alloy (X = Ag, Sn or Zn) couples were investigated. The experimental results confirm that addition of Ag or Zn can effectively suppress the growth of the Cu(3)Sn layer, while addition of Sn accelerates the growth of the Cu(3)Sn layer. Meanwhile, the formation of voids is effectively suppressed by alloying the Cu substrate. The disappearance of voids and the absence of the Cu(3)Sn layer were well explained in terms of the phase diagram and the diffusion flux: the Cu(3)Sn phase is a nonequilibrium phase based on the Sn-Cu-Zn ternary phase diagram, since a high-Zn region is formed at the Cu(6)Sn(5)/Cu-Zn alloy interface; in addition, the high Sn diffusion flux in the Cu(6)Sn(5) can suppress the growth of Cu(3)Sn and the formation of voids.
原文出处://WOS:000291041100010
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/31003]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
H. F. Zou,Q. K. Zhang,Z. F. Zhang. Interfacial Microstructure and Growth Kinetics of Intermetallic Compound Layers in Sn-4 wt.%Ag/Cu-X (X = Zn, Ag, Sn) Couples[J]. Journal of Electronic Materials,2011,40(7):1542-1548.
APA H. F. Zou,Q. K. Zhang,&Z. F. Zhang.(2011).Interfacial Microstructure and Growth Kinetics of Intermetallic Compound Layers in Sn-4 wt.%Ag/Cu-X (X = Zn, Ag, Sn) Couples.Journal of Electronic Materials,40(7),1542-1548.
MLA H. F. Zou,et al."Interfacial Microstructure and Growth Kinetics of Intermetallic Compound Layers in Sn-4 wt.%Ag/Cu-X (X = Zn, Ag, Sn) Couples".Journal of Electronic Materials 40.7(2011):1542-1548.

入库方式: OAI收割

来源:金属研究所

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