Zinc sulfide nanowire arrays on silicon wafers for field emitters
文献类型：期刊论文
| 作者 | Z. G. Chen ; L. Cheng ; J. Zou ; X. D. Yao ; G. Q. Lu ; H. M. Cheng |
| 刊名 | Nanotechnology
 |
| 出版日期 | 2010 |
| 卷号 | 21期号:6 |
| 关键词 | emission properties zns nanowire homoepitaxial growth nanostructures cathodoluminescence nanobelts nanotube |
| ISSN号 | 0957-4484 |
| 中文摘要 | Wurtzite structured zinc sulfide (ZnS) nanowire arrays are synthesized on silicon (111) wafers by a facile evaporation-condensation approach. These ZnS nanowire arrays possess predominant field emission properties with a low turn-on field of 2.9 V mu m(-1), a low threshold field of 4.25 V mu m(-1), a high field-enhancement factor (over 2700), and a high stability with a low fluctuation (similar to 0.8%). The improved field emission performance of these ZnS nanowire arrays is attributed to their specific crystallographic feature-array structures with nanotips and high single crystallinity. These results suggest that such ZnS nanowire arrays can be used as building blocks for field emitters. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/31039]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Z. G. Chen,L. Cheng,J. Zou,et al. Zinc sulfide nanowire arrays on silicon wafers for field emitters[J]. Nanotechnology,2010,21(6). |
| APA | Z. G. Chen,L. Cheng,J. Zou,X. D. Yao,G. Q. Lu,&H. M. Cheng.(2010).Zinc sulfide nanowire arrays on silicon wafers for field emitters.Nanotechnology,21(6). |
| MLA | Z. G. Chen,et al."Zinc sulfide nanowire arrays on silicon wafers for field emitters".Nanotechnology 21.6(2010). |
入库方式： OAI收割
来源：金属研究所
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