ZnS Branched Architectures as Optoelectronic Devices and Field Emitters
文献类型：期刊论文
| 作者 | Z. G. Chen ; L. N. Cheng ; H. Y. Xu ; J. Z. Liu ; J. Zou ; T. Sekiguchi ; G. Q. Lu ; H. M. Cheng |
| 刊名 | Advanced Materials
 |
| 出版日期 | 2010 |
| 卷号 | 22期号:21页码:2376-2380 |
| 关键词 | emission properties nanowire arrays growth nanostructures cathodoluminescence nanobelts nanoarchitectures heterostructures nanocrystals fabrication |
| ISSN号 | 0935-9648 |
| 中文摘要 | A unique ZnS branched architecture was fabricated by a facile thermal evaporation method. Stable UV emission at 327 nm and superior field emission with a low turn-on field, a high field-enhancement factor, a large current density, and small fluctuation were observed. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/31040]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Z. G. Chen,L. N. Cheng,H. Y. Xu,et al. ZnS Branched Architectures as Optoelectronic Devices and Field Emitters[J]. Advanced Materials,2010,22(21):2376-2380. |
| APA | Z. G. Chen.,L. N. Cheng.,H. Y. Xu.,J. Z. Liu.,J. Zou.,...&H. M. Cheng.(2010).ZnS Branched Architectures as Optoelectronic Devices and Field Emitters.Advanced Materials,22(21),2376-2380. |
| MLA | Z. G. Chen,et al."ZnS Branched Architectures as Optoelectronic Devices and Field Emitters".Advanced Materials 22.21(2010):2376-2380. |
入库方式： OAI收割
来源：金属研究所
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