Bulk growth of mono- to few-layer graphene on nickel particles by chemical vapor deposition from methane
文献类型：期刊论文
| 作者 | Z. P. Chen ; W. C. Ren ; B. L. Liu ; L. B. Gao ; S. F. Pei ; Z. S. Wu ; J. P. Zhao ; H. M. Cheng |
| 刊名 | Carbon
 |
| 出版日期 | 2010 |
| 卷号 | 48期号:12页码:3543-3550 |
| 关键词 | walled carbon nanotubes epitaxial graphene raman-scattering large-area suspended graphene high-quality large-scale films graphite exfoliation |
| ISSN号 | 0008-6223 |
| 中文摘要 | A method for the bulk growth of mono- to few-layer graphene on nickel particles by chemical vapor deposition from methane at atmospheric pressure is described. A graphene yield of about 2.5% of the weight of nickel particles used was achieved in a growth time of 5 mm. Scanning and transmission electron microscopy, Raman spectroscopy, thermogravimetry, and electrical conductivity measurements reveal the high quality of the graphene obtained. Suspended graphene can be prepared during this process, bridging the gaps between nearby nickel grains. After the growth of graphene the nickel particles can be effectively removed by a modest FeCl(3)/HCl etching treatment without degradation of the quality of the graphene sheets. (C) 2010 Elsevier Ltd. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/31041]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Z. P. Chen,W. C. Ren,B. L. Liu,et al. Bulk growth of mono- to few-layer graphene on nickel particles by chemical vapor deposition from methane[J]. Carbon,2010,48(12):3543-3550. |
| APA | Z. P. Chen.,W. C. Ren.,B. L. Liu.,L. B. Gao.,S. F. Pei.,...&H. M. Cheng.(2010).Bulk growth of mono- to few-layer graphene on nickel particles by chemical vapor deposition from methane.Carbon,48(12),3543-3550. |
| MLA | Z. P. Chen,et al."Bulk growth of mono- to few-layer graphene on nickel particles by chemical vapor deposition from methane".Carbon 48.12(2010):3543-3550. |
入库方式： OAI收割
来源：金属研究所
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