Synthesis of GaPO(4)-GaN Coaxial Nanowires
文献类型：期刊论文
| 作者 | L. T. Fu ; Z. G. Chen ; H. T. Cong |
| 刊名 | Journal of Materials Science & Technology
 |
| 出版日期 | 2010 |
| 卷号 | 26期号:1页码:15-19 |
| 关键词 | GaN GaPO(4) Coaxial nanowires nanorods nitride gan heterostructures transistors nanocables nanotubes emission |
| ISSN号 | 1005-0302 |
| 中文摘要 | GaPO(4)-GaN coaxial nanowires were synthesized by two-step chemical vapor deposition method using H(2) and NH(3) as reactant gas in turn at 950 degrees C. The morphology and microstructures of the GaPO(4)-GaN coaxial nanowires were studied by scanning elctron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The nanowires have an average diameter of similar to 15 nm and length of hundreds of nanometers. The core is GaPO(4) crystal and the outer shell is GaN crystal. The formation mechanism was discussed and the key factors controlling the growth are temperature and the concentration of reactant gases. These coaxial nanowires may have potential application for piezoluminescence nano-devices, and the two-step synthetic technique could be used to grow rationally other 1D GaN-based nanowire heterostructures. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/31111]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | L. T. Fu,Z. G. Chen,H. T. Cong. Synthesis of GaPO(4)-GaN Coaxial Nanowires[J]. Journal of Materials Science & Technology,2010,26(1):15-19. |
| APA | L. T. Fu,Z. G. Chen,&H. T. Cong.(2010).Synthesis of GaPO(4)-GaN Coaxial Nanowires.Journal of Materials Science & Technology,26(1),15-19. |
| MLA | L. T. Fu,et al."Synthesis of GaPO(4)-GaN Coaxial Nanowires".Journal of Materials Science & Technology 26.1(2010):15-19. |
入库方式： OAI收割
来源：金属研究所
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