Wurtzite P-Doped GaN Triangular Microtubes as Field Emitters
文献类型：期刊论文
| 作者 | L. T. Fu ; Z. G. Chen ; D. W. Wang ; L. N. Cheng ; H. Y. Xu ; J. Z. Liu ; H. T. Cong ; G. Q. Lu ; J. Zou |
| 刊名 | Journal of Physical Chemistry C
 |
| 出版日期 | 2010 |
| 卷号 | 114期号:21页码:9627-9633 |
| 关键词 | gallium nitride nanowires vapor-phase epitaxy emission properties optical-properties carbon nanotubes cross-sections growth cathodoluminescence nanorods heterostructures |
| ISSN号 | 1932-7447 |
| 中文摘要 | Novel P-doped GaN triangular microtubes were synthesized by a facile chemical vapor deposition method. This novel structure consists of a single hexagonal wurtzite phase with a triangular cross section. The tube lengths range from tens of to several hundred micrometers, and each side has a width between 0.5 and 1 mu m, with a tube wall thickness of several tens of nanometers. The formation mechanism of this triangular tubular structure is a vapor solid methanism, as determined by electron microscopy. Extraordinary and stable infrared emission (centered at similar to 724 nm) from the P-doped GaN triangular microtubes was observed from their photoluminescence spectroscopy. The low turn-on field (2.9 V mu m(-1)), high field-enhancement factor, large current density (3 mA cm(-2) at a field of similar to 9.5 V mu m(-1)), and high stability indicate the suitability of P-doped GaN microtubes as potential field emitters. This field emission property is attributed to the specific crystallographic feature-the rigid triangular structures with effective P doping and rough surface hillocks. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/31112]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | L. T. Fu,Z. G. Chen,D. W. Wang,et al. Wurtzite P-Doped GaN Triangular Microtubes as Field Emitters[J]. Journal of Physical Chemistry C,2010,114(21):9627-9633. |
| APA | L. T. Fu.,Z. G. Chen.,D. W. Wang.,L. N. Cheng.,H. Y. Xu.,...&J. Zou.(2010).Wurtzite P-Doped GaN Triangular Microtubes as Field Emitters.Journal of Physical Chemistry C,114(21),9627-9633. |
| MLA | L. T. Fu,et al."Wurtzite P-Doped GaN Triangular Microtubes as Field Emitters".Journal of Physical Chemistry C 114.21(2010):9627-9633. |
入库方式： OAI收割
来源：金属研究所
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