Nonequilibrium electron and spin properties in a parallel double quantum dot Fano interference device
文献类型：期刊论文
| 作者 | C. Jiang ; X. F. Xie ; W. J. Gong ; G. Z. Wei |
| 刊名 | European Physical Journal B
 |
| 出版日期 | 2010 |
| 卷号 | 75期号:2页码:237-245 |
| 关键词 | negative differential conductance transport charge fluctuations resonances amplifiers nanotubes coherence blockade states |
| ISSN号 | 1434-6028 |
| 中文摘要 | Nonequilibrium electron and spin transport properties in a parallel double quantum dot (QD) Fano interferometer are theoretically studied. With the shift of gate voltage around the chemical potential of either lead, we find the Fano lineshapes in the differential conductance spectra, which is sensitively determined by the bias voltage strength and appropriate QD level distributions. The intradot Coulomb interactions modulate the Fano interference in a substantial way and can induce the emergence of negative differential conductance, because of its nontrivial role in splitting the QD levels. In the presence of a local Rashba spin-orbit coupling, the interplay between the magnetic and Rashba fields induces the occurrence of the nonequilibrium spin-related Fano interference, different from the linear-transport results. Furthermore, the striking Coulomb-driven spin accumulation in the 'resonant-channel' QD appears. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/31175]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | C. Jiang,X. F. Xie,W. J. Gong,et al. Nonequilibrium electron and spin properties in a parallel double quantum dot Fano interference device[J]. European Physical Journal B,2010,75(2):237-245. |
| APA | C. Jiang,X. F. Xie,W. J. Gong,&G. Z. Wei.(2010).Nonequilibrium electron and spin properties in a parallel double quantum dot Fano interference device.European Physical Journal B,75(2),237-245. |
| MLA | C. Jiang,et al."Nonequilibrium electron and spin properties in a parallel double quantum dot Fano interference device".European Physical Journal B 75.2(2010):237-245. |
入库方式： OAI收割
来源：金属研究所
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