Multiscale Simulation of the Dislocation Emissions of Single Ni Crystal in Nanoindentation
文献类型：期刊论文
| 作者 | J. H. Li ; X. Zhao ; S. Q. Wang ; C. B. Zhang |
| 刊名 | Journal of Wuhan University of Technology-Materials Science Edition
 |
| 出版日期 | 2010 |
| 卷号 | 25期号:3页码:423-428 |
| 关键词 | single crystal Ni nanoindentation dislocation stacking fault quasicontinuum method molecular dynamics molecular-dynamics simulation quasi-continuum method deformation nucleation solids models |
| ISSN号 | 1000-2413 |
| 中文摘要 | The simulation of nanoindentation into single nickel crystal is performed by using quasi continuum method. The strain energy-displacement and load-displacement curves are presented to study the mechanical behavior of the dislocation nucleation. The characteristics of the stacking fault and dislocation nucleation are determined by calculating the centro-symmetry parameters and analyzing the displacement field of the atoms beneath the indenter. The structure of the stacking fault and the characteristics of dislocation obtained in the simulation by quasicontinuum method are reproduced in the simulation by molecular dynamics. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/31219]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | J. H. Li,X. Zhao,S. Q. Wang,et al. Multiscale Simulation of the Dislocation Emissions of Single Ni Crystal in Nanoindentation[J]. Journal of Wuhan University of Technology-Materials Science Edition,2010,25(3):423-428. |
| APA | J. H. Li,X. Zhao,S. Q. Wang,&C. B. Zhang.(2010).Multiscale Simulation of the Dislocation Emissions of Single Ni Crystal in Nanoindentation.Journal of Wuhan University of Technology-Materials Science Edition,25(3),423-428. |
| MLA | J. H. Li,et al."Multiscale Simulation of the Dislocation Emissions of Single Ni Crystal in Nanoindentation".Journal of Wuhan University of Technology-Materials Science Edition 25.3(2010):423-428. |
入库方式： OAI收割
来源：金属研究所
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