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Unique Electronic Structure Induced High Photoreactivity of Sulfur-Doped Graphitic C(3)N(4)
文献类型：期刊论文
| 作者 | G. Liu ; P. Niu ; C. H. Sun ; S. C. Smith ; Z. G. Chen ; G. Q. Lu ; H. M. Cheng |
| 刊名 | Journal of the American Chemical Society
 |
| 出版日期 | 2010 |
| 卷号 | 132期号:33页码:11642-11648 |
| 关键词 | visible-light irradiation metal-free catalysts carbon nitride hydrogen-production titanium-dioxide photocatalytic activity water semiconductor tio2 evolution |
| ISSN号 | 0002-7863 |
| 中文摘要 | Electronic structure intrinsically controls the light absorbance, redox potential, charge-carrier mobility, and consequently, photoreactivity of semiconductor photocatalysts. The conventional approach of modifying the electronic structure of a semiconductor photocatalyst for a wider absorption range by anion doping operates at the cost of reduced redox potentials and/or charge-carrier mobility, so that its photoreactivity is usually limited and some important reactions may not occur at all. Here, we report sulfur-doped graphitic C(3)N(4) (C(3)N(4-x)S(x)) with a unique electronic structure that displays an increased valence bandwidth in combination with an elevated conduction band minimum and a slightly reduced absorbance. The C(3)N(4-x)S(x) shows a photoreactivity of H(2) evolution 7.2 and 8.0 times higher than C(3)N(4) under lambda > 300 and 420 nm, respectively. More strikingly, the complete oxidation process of phenol under lambda > 400 nm can occur for sulfur-doped C(3)N(4), which is impossible for C(3)N(4) even under lambda > 300 nm. The homogeneous substitution of sulfur for lattice nitrogen and a concomitant quantum confinement effect are identified as the cause of this unique electronic structure and, consequently, the excellent photoreactivity of C(3)N(4-x)S(x). The results acquired may shed light on general doping strategies for designing potentially efficient photocatalysts. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/31281]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. Liu,P. Niu,C. H. Sun,et al. Unique Electronic Structure Induced High Photoreactivity of Sulfur-Doped Graphitic C(3)N(4)[J]. Journal of the American Chemical Society,2010,132(33):11642-11648. |
| APA | G. Liu.,P. Niu.,C. H. Sun.,S. C. Smith.,Z. G. Chen.,...&H. M. Cheng.(2010).Unique Electronic Structure Induced High Photoreactivity of Sulfur-Doped Graphitic C(3)N(4).Journal of the American Chemical Society,132(33),11642-11648. |
| MLA | G. Liu,et al."Unique Electronic Structure Induced High Photoreactivity of Sulfur-Doped Graphitic C(3)N(4)".Journal of the American Chemical Society 132.33(2010):11642-11648. |
入库方式： OAI收割
来源：金属研究所
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