Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films
文献类型：期刊论文
| 作者 | W. W. Liu ; S. Q. Zhao ; K. Zhao ; A. W. Sun |
| 刊名 | International Journal of Photoenergy
 |
| 出版日期 | 2010 |
| ISSN号 | 1110-662X |
| 关键词 | photodetectors |
| 中文摘要 | A transient lateral photovoltaic effect has been observed in Ag-doped ZnO thin films. Under the nonuniform irradiation of a 1064 nm pulsed laser, the photovoltaic response shows high sensitivity to the spot position on the film surface. The highest photovoltaic responsivity of 27.1 mV mJ(-1) was observed, with a decline time of similar to 1.5 ns and a full width at half-maximum (FWHM) of similar to 4 ns. The photovoltaic position sensitivity can reach about 3.8 mV mJ(-1) mm(-1). This paper demonstrates the potential of Ag-doped ZnO films in the position-sensitive infrared detection |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/31314]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | W. W. Liu,S. Q. Zhao,K. Zhao,et al. Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films[J]. International Journal of Photoenergy,2010. |
| APA | W. W. Liu,S. Q. Zhao,K. Zhao,&A. W. Sun.(2010).Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films.International Journal of Photoenergy. |
| MLA | W. W. Liu,et al."Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films".International Journal of Photoenergy (2010). |
入库方式： OAI收割
来源：金属研究所
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