Weakening of the Cu/Cu(3)Sn(100) Interface by Bi Impurities
文献类型：期刊论文
| 作者 | X. Y. Pang ; P. J. Shang ; S. Q. Wang ; Z. Q. Liu ; J. K. Shang |
| 刊名 | Journal of Electronic Materials
 |
| 出版日期 | 2010 |
| 卷号 | 39期号:8页码:1277-1282 |
| 关键词 | DFT bismuth impurity interface bonding solder interconnect molecular-dynamics bismuth solder embrittlement joints copper cu3sn pseudopotentials segregation fracture |
| ISSN号 | 0361-5235 |
| 中文摘要 | We have performed density functional theory calculations to examine the role of Bi impurities in modifying the structure and properties of the Cu/Cu(3)Sn(100) interface. Analysis of the heat of supercell formation reveals that Bi atoms preferentially replace Cu atom in the Cu slab. Substitution of Cu by Bi reduces the adhesion energy of the interface from 1.5 J/m(2) to 1.1 J/m(2), primarily due to the atomic size effect. The size effect leads to expansion of the interface, because surrounding Cu and Sn atoms are pushed away from the misfit Bi atoms. Analysis of electronic density indicates that the local charge density is dispersed around Bi atoms. The presence of a Bi atom makes surrounding atoms less active, which is attributed to the reduction of hybridizations. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/31407]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. Y. Pang,P. J. Shang,S. Q. Wang,et al. Weakening of the Cu/Cu(3)Sn(100) Interface by Bi Impurities[J]. Journal of Electronic Materials,2010,39(8):1277-1282. |
| APA | X. Y. Pang,P. J. Shang,S. Q. Wang,Z. Q. Liu,&J. K. Shang.(2010).Weakening of the Cu/Cu(3)Sn(100) Interface by Bi Impurities.Journal of Electronic Materials,39(8),1277-1282. |
| MLA | X. Y. Pang,et al."Weakening of the Cu/Cu(3)Sn(100) Interface by Bi Impurities".Journal of Electronic Materials 39.8(2010):1277-1282. |
入库方式： OAI收割
来源：金属研究所
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