How thick SiO(2) cap layer is needed to achieve strong visible photoluminescence from SiO(2)-buffered SiN(x) films?
文献类型：期刊论文
| 作者 | M. Xu ; Q. Y. Chen ; S. Xu ; K. Ostrikov ; Y. Wei ; Y. C. Ee |
| 刊名 | Physica E-Low-Dimensional Systems & Nanostructures
 |
| 出版日期 | 2010 |
| 卷号 | 42期号:8页码:2016-2020 |
| 关键词 | SiNx film SiO(2) Annealing Photoluminescence silicon oxynitride si0.7ge0.3 layers defect spectrum nanostructures luminescence morphology devices origin growth |
| ISSN号 | 1386-9477 |
| 中文摘要 | The effect of a SiO(2) nanolayer and annealing temperature on the UV/visible room-temperature photoluminescence (PL) from SiN(x) films synthesized by rf magnetron sputtering is studied. The PL intensity can be maximized when the SiO(2) layer is 5-10 nm thick at 800 degrees C annealing temperature and only 2 nm at 1000 degrees C. A composition-structure-property analysis reveals that the PL intensity is directly related to both the surface chemical states and the content of the Si-0 and Si-N bonds in the SiN(x), films. These results are relevant for the development of advanced optoelectronic and photonic emitters and sensors. (C) 2010 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/31610]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | M. Xu,Q. Y. Chen,S. Xu,et al. How thick SiO(2) cap layer is needed to achieve strong visible photoluminescence from SiO(2)-buffered SiN(x) films?[J]. Physica E-Low-Dimensional Systems & Nanostructures,2010,42(8):2016-2020. |
| APA | M. Xu,Q. Y. Chen,S. Xu,K. Ostrikov,Y. Wei,&Y. C. Ee.(2010).How thick SiO(2) cap layer is needed to achieve strong visible photoluminescence from SiO(2)-buffered SiN(x) films?.Physica E-Low-Dimensional Systems & Nanostructures,42(8),2016-2020. |
| MLA | M. Xu,et al."How thick SiO(2) cap layer is needed to achieve strong visible photoluminescence from SiO(2)-buffered SiN(x) films?".Physica E-Low-Dimensional Systems & Nanostructures 42.8(2010):2016-2020. |
入库方式： OAI收割
来源：金属研究所
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