Synthesis of aluminum nitride thin films by filtered arc ion plating deposition
文献类型：期刊论文
| 作者 | X. B. Yan ; Y. L. Dong ; H. Q. Li ; J. Gong ; C. Sun |
| 刊名 | Materials Letters
 |
| 出版日期 | 2010 |
| 卷号 | 64期号:11页码:1261-1263 |
| 关键词 | Filtered arc ion plating Aluminum nitride Thin films Microstructure Deposition rate Transmittance growth aln |
| ISSN号 | 0167-577X |
| 中文摘要 | Thin films of aluminum nitride (AlN) were deposited on stainless steel and glass substrates by a modified deposition technique, filtered arc ion plating, at an enhanced deposition rate. X-ray diffraction spectra confirmed the exclusive presence of AlN hexagonal wurtzite phase. Under a mixed gas (Ar + N(2)) pressure of 0.90 Pa and a bias voltage of -400 V. the deposited films exhibited a fairly low surface roughness of 2.23 nm. The thin films were proved higher than 75% transparent in the visible spectral region. The bonding strength between the film and substrate was verified higher than 20 N. Thus high performance of such AlN thin films can be expected in applications. (C) 2010 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/31625]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. B. Yan,Y. L. Dong,H. Q. Li,et al. Synthesis of aluminum nitride thin films by filtered arc ion plating deposition[J]. Materials Letters,2010,64(11):1261-1263. |
| APA | X. B. Yan,Y. L. Dong,H. Q. Li,J. Gong,&C. Sun.(2010).Synthesis of aluminum nitride thin films by filtered arc ion plating deposition.Materials Letters,64(11),1261-1263. |
| MLA | X. B. Yan,et al."Synthesis of aluminum nitride thin films by filtered arc ion plating deposition".Materials Letters 64.11(2010):1261-1263. |
入库方式： OAI收割
来源：金属研究所
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