中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Unipolar resistive switching effect in YMn(1-delta)O(3) thin films

文献类型:期刊论文

作者Z. B. Yan ; S. Z. Li ; K. F. Wang ; J. M. Liu
刊名Applied Physics Letters
出版日期2010
卷号96期号:1
关键词electric resistance ferroelectric materials ferroelectric switching fracture insulating thin films MIM structures platinum Poole-Frenkel effect yttrium compounds
ISSN号0003-6951
中文摘要Steady unipolar resistive switching of Pt/YMn(1-delta)O(3)/Pt MIM structure is investigated. High resistance ratio (>10(4)) of high resistance state (HRS) over low resistance state (LRS) and long retention (>10(5) s) are achieved. It is suggested that the Joule heating and Poole-Frenkel effect dominate respectively the conduction of the LRS and HRS in high electric field region. The resistive switching is explained by the rupture and formation of conductive filaments in association with the local Joule-heat-induced redox inside YMn(1-delta)O(3).
原文出处://WOS:000273473200019
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/31627]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Z. B. Yan,S. Z. Li,K. F. Wang,et al. Unipolar resistive switching effect in YMn(1-delta)O(3) thin films[J]. Applied Physics Letters,2010,96(1).
APA Z. B. Yan,S. Z. Li,K. F. Wang,&J. M. Liu.(2010).Unipolar resistive switching effect in YMn(1-delta)O(3) thin films.Applied Physics Letters,96(1).
MLA Z. B. Yan,et al."Unipolar resistive switching effect in YMn(1-delta)O(3) thin films".Applied Physics Letters 96.1(2010).

入库方式: OAI收割

来源:金属研究所

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