Yield Strength of Transparent MgAl(2)O(4) Nano-Ceramic at High Pressure and Temperature
文献类型:期刊论文
作者 | J. Zhang ; T. C. Lu ; X. H. Chang ; S. L. Jiang ; N. A. Wei ; J. Q. Qi |
刊名 | Nanoscale Research Letters
![]() |
出版日期 | 2010 |
卷号 | 5期号:8页码:1329-1332 |
关键词 | Transparent MgAl(2)O(4) nano-ceramics High pressure/temperature Differential strain Yield strength Stress relaxation spinel thermomechanics powder size |
ISSN号 | 1931-7573 |
中文摘要 | We report here experimental results of yield strength and stress relaxation measurements of transparent MgAl(2)O(4) nano-ceramics at high pressure and temperature. During compression at ambient temperature, the differential strain deduced from peak broadening increased significantly with pressure up to 2 GPa, with no clear indication of strain saturation. However, by then, warming the sample above 400A degrees C under 4 GPa, stress relaxation was obviously observed, and all subsequent plastic deformation cycles are characterized again by peak broadening. Our results reveal a remarkable reduction in yield strength as the sintering temperature increases from 400 to 900A degrees C. The low temperature for the onset of stress relaxation has attracted attention regarding the performance of transparent MgAl(2)O(4) nano-ceramics as an engineering material. |
原文出处 | |
公开日期 | 2012-04-13 |
源URL | [http://210.72.142.130/handle/321006/31704] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | J. Zhang,T. C. Lu,X. H. Chang,et al. Yield Strength of Transparent MgAl(2)O(4) Nano-Ceramic at High Pressure and Temperature[J]. Nanoscale Research Letters,2010,5(8):1329-1332. |
APA | J. Zhang,T. C. Lu,X. H. Chang,S. L. Jiang,N. A. Wei,&J. Q. Qi.(2010).Yield Strength of Transparent MgAl(2)O(4) Nano-Ceramic at High Pressure and Temperature.Nanoscale Research Letters,5(8),1329-1332. |
MLA | J. Zhang,et al."Yield Strength of Transparent MgAl(2)O(4) Nano-Ceramic at High Pressure and Temperature".Nanoscale Research Letters 5.8(2010):1329-1332. |
入库方式: OAI收割
来源:金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。