中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A photoconductive semiconductor switch based on an individual ZnS nanobelt

文献类型:期刊论文

作者X. J. Zheng ; Y. Q. Chen ; T. Zhang ; C. B. Jiang ; B. Yang ; B. Yuan ; S. X. Mao ; W. Lie
刊名Scripta Materialia
出版日期2010
卷号62期号:7页码:520-523
关键词Photoconductive ZnS Nanobelt Ultraviolet light Photosensitivity nanowires devices
ISSN号1359-6462
中文摘要A photoconductive semiconductor switch (PCSS) based on an individual ZnS nanobelt (NB) was investigated. Under ultraviolet light (280 nm), the current-voltage curve shows that this PCSS is of high photosensitivity (similar to 10(4)), and the response time spectrum shows that this PCSS has a fast response (typical rise time 0.07 s and decay time 0.12 s) and a high-voltage response (6.7 V). Oxygen chemisorption is responsible for the improved photoconductive properties. This PCSS is a promising candidate for future integration. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
原文出处://WOS:000274888600023
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/31766]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
X. J. Zheng,Y. Q. Chen,T. Zhang,et al. A photoconductive semiconductor switch based on an individual ZnS nanobelt[J]. Scripta Materialia,2010,62(7):520-523.
APA X. J. Zheng.,Y. Q. Chen.,T. Zhang.,C. B. Jiang.,B. Yang.,...&W. Lie.(2010).A photoconductive semiconductor switch based on an individual ZnS nanobelt.Scripta Materialia,62(7),520-523.
MLA X. J. Zheng,et al."A photoconductive semiconductor switch based on an individual ZnS nanobelt".Scripta Materialia 62.7(2010):520-523.

入库方式: OAI收割

来源:金属研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。