Growth of well-oriented Al(x)In(1-x)N films by sputtering at low temperature
文献类型：期刊论文
| 作者 | C. J. Dong ; M. Xu ; Q. Y. Chen ; F. S. Liu ; H. P. Zhou ; Y. Wei ; H. X. Ji |
| 刊名 | Journal of Alloys and Compounds
 |
| 出版日期 | 2009 |
| 卷号 | 479期号:1-2页码:812-815 |
| 关键词 | Al(x)In(1-x)N film Magnetron sputtering Crystallinity Resistance molecular-beam epitaxy fundamental-band gap vapor-phase epitaxy optical-properties energy alinn inn aln nanowires inxal1-xn |
| ISSN号 | 0925-8388 |
| 中文摘要 | Al(x)In(1-x)N films with an AlN buffer were deposited on different substrates (including Si(1 1 1), sapphire, and glass) by radio-frequency (RF) magnetron sputtering at a low temperature of 300 degrees C. The morphology and structure analysis revealed that the Al(x)In(1-x)N films grown on Si(1 1 1) and sapphire are of high orientation and good crystallinity with a bandgap energy (E(g)) of less than 2.41 eV. The sheet resistance of Al(x)In(1-x)N film grown on Si(1 1 1) and sapphire is approximately 40 Omega/square. These results are highly relevant to the development of effective nitride photovoltaic materials. (C) 2009 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/31868]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | C. J. Dong,M. Xu,Q. Y. Chen,et al. Growth of well-oriented Al(x)In(1-x)N films by sputtering at low temperature[J]. Journal of Alloys and Compounds,2009,479(1-2):812-815. |
| APA | C. J. Dong.,M. Xu.,Q. Y. Chen.,F. S. Liu.,H. P. Zhou.,...&H. X. Ji.(2009).Growth of well-oriented Al(x)In(1-x)N films by sputtering at low temperature.Journal of Alloys and Compounds,479(1-2),812-815. |
| MLA | C. J. Dong,et al."Growth of well-oriented Al(x)In(1-x)N films by sputtering at low temperature".Journal of Alloys and Compounds 479.1-2(2009):812-815. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。