Raman Spectra Analysis of Bromine Doped Hydrogenated Amorphous Carbon (a-C : Br : H) Films Deposited by RF-PECVD
文献类型：期刊论文
| 作者 | J. H. Feng ; T. C. Lu ; W. D. Wu ; P. Jia |
| 刊名 | Spectroscopy and Spectral Analysis
 |
| 出版日期 | 2009 |
| 卷号 | 29期号:12页码:3309-3311 |
| 关键词 | Raman spectroscopy RF-PECVD a-C:Br:H sp(2) thin-films diamond spectroscopy |
| ISSN号 | 1000-0593 |
| 中文摘要 | Bromine doped hydrogenated amorphous carbon (a-C : Br : H) thin films were deposited on silicon wafers by rf. -plasma enhanced chemical vapor deposition (RF-PECVD) with a frequency of 13. 56 MHz at room temperature using pure bromoethane as a precursor of carbon source mixed with hydrogen (H(2)) as a carrier gas. The structures of the films prepared by partial pressure of mixed gas (C(2)H(5)Br/H(2)) were Studied by Raman spectroscopy. The results indicate that the intensity of the Raman D peak is stronger. the Raman G peak positions shift up it little. and the value of I(D)/I(G), increases from 1. 18 to 1. 36, if the gas pressure of mixed C(2)H(5)Br/H(2) is reduced gradually from 20 to 5 Pa. Meanwhile. the growth of thin film turns gradually into low energy mode promoting the transform of sp(2)-C from chains to rings. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/31898]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | J. H. Feng,T. C. Lu,W. D. Wu,et al. Raman Spectra Analysis of Bromine Doped Hydrogenated Amorphous Carbon (a-C : Br : H) Films Deposited by RF-PECVD[J]. Spectroscopy and Spectral Analysis,2009,29(12):3309-3311. |
| APA | J. H. Feng,T. C. Lu,W. D. Wu,&P. Jia.(2009).Raman Spectra Analysis of Bromine Doped Hydrogenated Amorphous Carbon (a-C : Br : H) Films Deposited by RF-PECVD.Spectroscopy and Spectral Analysis,29(12),3309-3311. |
| MLA | J. H. Feng,et al."Raman Spectra Analysis of Bromine Doped Hydrogenated Amorphous Carbon (a-C : Br : H) Films Deposited by RF-PECVD".Spectroscopy and Spectral Analysis 29.12(2009):3309-3311. |
入库方式： OAI收割
来源：金属研究所
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