Crystal Structure and Electronic Structure of a Novel Hf(3)AlN Ceramic
文献类型：期刊论文
| 作者 | F. Z. Li ; C. F. Hu ; J. M. Wang ; B. Liu ; J. Y. Wang ; Y. C. Zhou |
| 刊名 | Journal of the American Ceramic Society
 |
| 出版日期 | 2009 |
| 卷号 | 92期号:2页码:476-480 |
| 关键词 | magnetron sputtering method fusion-reactor materials zr-al-n films oxidation hafnium |
| ISSN号 | 0002-7820 |
| 中文摘要 | In this work, we have fabricated a novel ternary aluminum nitride, Hf(3)AlN, via a reactive hot pressing method using hafnium and aluminum nitride as starting materials. The crystal structure of Hf(3)AlN was established by a combination of ab initio calculation, X-ray diffraction, and electron diffraction analyses. The point group and space group of Hf(3)AlN were determined as mmm and Cmcm, respectively. The lattice constants are a=0.3298 nm, b=1.135 nm, c=0.8842 nm and the atomic positions are Hf1 at 4c (0, 0.0441, 0.2500), Hf2 at 8f (0, 0.3701, 0.0437), Al at 4c (0, 0.7469, 0.2500), and N at 4a (0, 0, 0). Electronic structure analysis demonstrated that Hf(3)AlN should possess metallic conductivity and intrinsic damage tolerance. We hope that this work will inspire future experimental research on this Hf-based ternary ceramic. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/32016]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | F. Z. Li,C. F. Hu,J. M. Wang,et al. Crystal Structure and Electronic Structure of a Novel Hf(3)AlN Ceramic[J]. Journal of the American Ceramic Society,2009,92(2):476-480. |
| APA | F. Z. Li,C. F. Hu,J. M. Wang,B. Liu,J. Y. Wang,&Y. C. Zhou.(2009).Crystal Structure and Electronic Structure of a Novel Hf(3)AlN Ceramic.Journal of the American Ceramic Society,92(2),476-480. |
| MLA | F. Z. Li,et al."Crystal Structure and Electronic Structure of a Novel Hf(3)AlN Ceramic".Journal of the American Ceramic Society 92.2(2009):476-480. |
入库方式： OAI收割
来源：金属研究所
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