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Amorphization by dislocation accumulation in shear bands

文献类型:期刊论文

作者Z. J. Lin ; M. J. Zhuo ; Z. Q. Sun ; P. Veyssiere ; Y. C. Zhou
刊名Acta Materialia
出版日期2009
卷号57期号:9页码:2851-2857
关键词Dislocation Shear bands TEM Ceramics transmission electron-microscopy planar deformation features plastic-deformation silicon-nitride nanostructured materials mechanical-properties glass transformation metallic materials shocked quartz crystal
ISSN号1359-6454
中文摘要Microcrystalline gamma-Y(2)Si(2)O(7) was indented at room temperature and the deformation microstructure was investigated by transmission electron microscopy in the vicinity of the indent. The volume directly beneath the indent comprises nanometer-sized grains delimited by an amorphous phase while dislocations dominate in the periphery either as dense slip bands in the border of the indent or, further away, as individual dislocations. The amorphous layers and the slip bands are a few nanometers thick. They lie along well-defined crystallographic planes. The microstructural organization is consistent with a stress-induced amorphization process whereby, under severe mechanical conditions, the crystal to amorphous transformation is mediated by slip bands containing a high density of dislocations. It is suggested that the damage tolerance of gamma-Y(2)Si(2)O(7), which is exceptional for a ceramic material, benefits from this transformation. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
原文出处://WOS:000266180300028
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/32061]  
专题金属研究所_中国科学院金属研究所
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Z. J. Lin,M. J. Zhuo,Z. Q. Sun,et al. Amorphization by dislocation accumulation in shear bands[J]. Acta Materialia,2009,57(9):2851-2857.
APA Z. J. Lin,M. J. Zhuo,Z. Q. Sun,P. Veyssiere,&Y. C. Zhou.(2009).Amorphization by dislocation accumulation in shear bands.Acta Materialia,57(9),2851-2857.
MLA Z. J. Lin,et al."Amorphization by dislocation accumulation in shear bands".Acta Materialia 57.9(2009):2851-2857.

入库方式: OAI收割

来源:金属研究所

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