Bismuth redistribution induced by intermetallic compound growth in SnBi/Cu microelectronic interconnect
文献类型：期刊论文
| 作者 | C. Liu ; W. Zhang |
| 刊名 | Journal of Materials Science
 |
| 出版日期 | 2009 |
| 卷号 | 44期号:1页码:149-153 |
| 关键词 | lead-free solders interfacial reactions copper segregation embrittlement |
| ISSN号 | 0022-2461 |
| 中文摘要 | It was found that Bi particles, with a diameter of 100 nm, precipitated along Cu(3)Sn/Cu interface and Bi crystallites dispersed in Cu(3)Sn layer in 42Sn58Bi/Cu microelectronic interconnect, when it was aged at 120 A degrees C for 7 days. The mechanism for Bi redistribution like this was discussed. Cu(6)Sn(5) turned into Cu(3)Sn by Cu diffusion that is dominant in Sn/Cu inter-diffusion during the aging process. Bi precipitation occurred in Cu(3)Sn due to lower Bi solubility in Cu(3)Sn than that in Cu(6)Sn(5). The Bi precipitates can traverse the formed Cu(3)Sn quickly toward the Cu(3)Sn/Cu interface, attributed to the Kirkendall effect. They stayed and nucleated there to form particles, owing to their unwettability on Cu. The formed Cu(3)Sn got oversaturated with Bi, when the joint cooled from 120 A degrees C to room temperature. Then Bi crystallites precipitated dispersedly in Cu(3)Sn layer. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/32068]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | C. Liu,W. Zhang. Bismuth redistribution induced by intermetallic compound growth in SnBi/Cu microelectronic interconnect[J]. Journal of Materials Science,2009,44(1):149-153. |
| APA | C. Liu,&W. Zhang.(2009).Bismuth redistribution induced by intermetallic compound growth in SnBi/Cu microelectronic interconnect.Journal of Materials Science,44(1),149-153. |
| MLA | C. Liu,et al."Bismuth redistribution induced by intermetallic compound growth in SnBi/Cu microelectronic interconnect".Journal of Materials Science 44.1(2009):149-153. |
入库方式： OAI收割
来源：金属研究所
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