Ohmic contacts and photoconductivity of individual ZnTe nanowires
文献类型：期刊论文
| 作者 | Q. F. Meng ; C. B. Jiang ; S. X. Mao |
| 刊名 | Applied Physics Letters
 |
| 出版日期 | 2009 |
| 卷号 | 94期号:4 |
| 关键词 | electrical resistivity electrochemical electrodes electron traps electron-hole recombination gold hole traps II-VI semiconductors multilayers nanowires nickel ohmic contacts photoconductivity semiconductor quantum wires wide band gap semiconductors zinc compounds molecular-beam epitaxy semiconductor nanowires electrical-properties zno nanowires growth photodetectors nanoribbon transport layers |
| ISSN号 | 0003-6951 |
| 中文摘要 | Ohmic contacts to individual ZnTe nanowires were formed using Ni/Au multilayer electrodes. Measurements based on four terminals were carried out to test the current-voltage characteristics of contacts and nanowires. Specific contact resistivity of Ni/Au contacts is similar to 5.2x10(-2) Omega cm(2) and the intrinsic resistivity of the ZnTe nanowire is similar to 369.1 Omega cm. The photoconductivity behavior of individual ZnTe nanowires was observed, which was analyzed with theory of carrier generation, trapping, and recombination. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/32210]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Q. F. Meng,C. B. Jiang,S. X. Mao. Ohmic contacts and photoconductivity of individual ZnTe nanowires[J]. Applied Physics Letters,2009,94(4). |
| APA | Q. F. Meng,C. B. Jiang,&S. X. Mao.(2009).Ohmic contacts and photoconductivity of individual ZnTe nanowires.Applied Physics Letters,94(4). |
| MLA | Q. F. Meng,et al."Ohmic contacts and photoconductivity of individual ZnTe nanowires".Applied Physics Letters 94.4(2009). |
入库方式： OAI收割
来源：金属研究所
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