中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
TEM Observations of the Growth of Intermetallic Compounds at the SnBi/Cu Interface

文献类型:期刊论文

作者P. J. Shang ; Z. Q. Liu ; D. X. Li ; J. K. Shang
刊名Journal of Electronic Materials
出版日期2009
卷号38期号:12页码:2579-2584
关键词Intermetallic compound (IMC) SnBi solder interface diffusion growth mechanism reactive interface solder joints molten sn cu-sn technology kinetics
ISSN号0361-5235
中文摘要The microstructure of the eutectic SnBi/Cu interface was investigated by transmission electron microscopy to study the growth mechanisms of the intermetallic compounds (IMCs). Although the growth kinetics of the total IMC layer were similar, the individual Cu(3)Sn layer grew faster on polycrystalline Cu than on single-crystal substrates. It was found that, on polycrystalline Cu, newly formed Cu(3)Sn grains with a smaller grain size nucleated and grew at both the Cu/Cu(3)Sn and Cu(3)Sn/Cu(6)Sn(5) interfaces during reflow and solid-state aging. The consumption of Cu(6)Sn(5) to form Cu(3)Sn was faster at the Cu(3)Sn/Cu(6)Sn(5) interface. While on single-crystal Cu new Cu(3)Sn grains nucleated only at the Cu/Cu(3)Sn interface, the directional growth of the initial columnar Cu(3)Sn controlled the advance of the Cu(3)Sn/Cu(6)Sn(5) interface.
原文出处://WOS:000272301900020
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/32261]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
P. J. Shang,Z. Q. Liu,D. X. Li,et al. TEM Observations of the Growth of Intermetallic Compounds at the SnBi/Cu Interface[J]. Journal of Electronic Materials,2009,38(12):2579-2584.
APA P. J. Shang,Z. Q. Liu,D. X. Li,&J. K. Shang.(2009).TEM Observations of the Growth of Intermetallic Compounds at the SnBi/Cu Interface.Journal of Electronic Materials,38(12),2579-2584.
MLA P. J. Shang,et al."TEM Observations of the Growth of Intermetallic Compounds at the SnBi/Cu Interface".Journal of Electronic Materials 38.12(2009):2579-2584.

入库方式: OAI收割

来源:金属研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。