TEM Observations of the Growth of Intermetallic Compounds at the SnBi/Cu Interface
文献类型:期刊论文
作者 | P. J. Shang ; Z. Q. Liu ; D. X. Li ; J. K. Shang |
刊名 | Journal of Electronic Materials
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出版日期 | 2009 |
卷号 | 38期号:12页码:2579-2584 |
关键词 | Intermetallic compound (IMC) SnBi solder interface diffusion growth mechanism reactive interface solder joints molten sn cu-sn technology kinetics |
ISSN号 | 0361-5235 |
中文摘要 | The microstructure of the eutectic SnBi/Cu interface was investigated by transmission electron microscopy to study the growth mechanisms of the intermetallic compounds (IMCs). Although the growth kinetics of the total IMC layer were similar, the individual Cu(3)Sn layer grew faster on polycrystalline Cu than on single-crystal substrates. It was found that, on polycrystalline Cu, newly formed Cu(3)Sn grains with a smaller grain size nucleated and grew at both the Cu/Cu(3)Sn and Cu(3)Sn/Cu(6)Sn(5) interfaces during reflow and solid-state aging. The consumption of Cu(6)Sn(5) to form Cu(3)Sn was faster at the Cu(3)Sn/Cu(6)Sn(5) interface. While on single-crystal Cu new Cu(3)Sn grains nucleated only at the Cu/Cu(3)Sn interface, the directional growth of the initial columnar Cu(3)Sn controlled the advance of the Cu(3)Sn/Cu(6)Sn(5) interface. |
原文出处 | |
公开日期 | 2012-04-13 |
源URL | [http://210.72.142.130/handle/321006/32261] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | P. J. Shang,Z. Q. Liu,D. X. Li,et al. TEM Observations of the Growth of Intermetallic Compounds at the SnBi/Cu Interface[J]. Journal of Electronic Materials,2009,38(12):2579-2584. |
APA | P. J. Shang,Z. Q. Liu,D. X. Li,&J. K. Shang.(2009).TEM Observations of the Growth of Intermetallic Compounds at the SnBi/Cu Interface.Journal of Electronic Materials,38(12),2579-2584. |
MLA | P. J. Shang,et al."TEM Observations of the Growth of Intermetallic Compounds at the SnBi/Cu Interface".Journal of Electronic Materials 38.12(2009):2579-2584. |
入库方式: OAI收割
来源:金属研究所
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