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Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers

文献类型:期刊论文

作者M. Wang ; B. Zhang ; G. P. Zhang ; Q. Y. Yu ; C. S. Liu
刊名Journal of Materials Science & Technology
出版日期2009
卷号25期号:5页码:699-702
关键词Electrical resistivity Multilayer Interface Grain boundary scattering Length scale thin copper-films polycrystalline films transport-properties external surfaces metallic-films scattering superlattices reflection dependence behavior
ISSN号1005-0302
中文摘要The electrical resistivity of Cu/Ta multilayers deposited by radio-frequency magnetron sputtering on a polyimide substrate was investigated as a function of monolayer thickness It is found that the resistivity of the multilayer increases with decreasing monolayer thickness from 500 nm to 10 nm Two significant effects of layer interface scattering and grain boundary scattering were identified to dominate electronic transportation behavior in the Cu/Ta multilayers at different length scales The electrical resistivity of the multilayer with monolayer thickness ranging from nanometer to submicron scales can be well described by a newly-proposed Fuchs-Sandheimair (F-S) and Mayadas-Shatzkes (M-S) combined model
原文出处://WOS:000271113600025
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/32366]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
M. Wang,B. Zhang,G. P. Zhang,et al. Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers[J]. Journal of Materials Science & Technology,2009,25(5):699-702.
APA M. Wang,B. Zhang,G. P. Zhang,Q. Y. Yu,&C. S. Liu.(2009).Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers.Journal of Materials Science & Technology,25(5),699-702.
MLA M. Wang,et al."Effects of Interface and Grain Boundary on the Electrical Resistivity of Cu/Ta Multilayers".Journal of Materials Science & Technology 25.5(2009):699-702.

入库方式: OAI收割

来源:金属研究所

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