High Temperature Metal-Insulator Transition Induced by Rare-Earth Doping in Perovskite CaMnO(3)
文献类型:期刊论文
作者 | Y. Wang ; Y. Sui ; J. G. Cheng ; X. J. Wang ; Z. Lu ; W. H. Su |
刊名 | Journal of Physical Chemistry C
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出版日期 | 2009 |
卷号 | 113期号:28页码:12509-12516 |
关键词 | electron-doped manganites neutron-diffraction thermopower oxides transport oxidation systems physics ca |
ISSN号 | 1932-7447 |
中文摘要 | This paper reports the crystal structure and high-temperature transport properties of electron-doped perovskite manganites Ca(0.9)R(0.1)MnO(3) (R = La, Pr,..., Yb). All the samples crystallized into a orthorhombic distorted perovskite structure (space group Prima). The structural distortion increases as the average A-site cation size < r(A)> decreases; the average Mn-O-Mn bond angle theta(Mn-O-Mn) monotonously decreases, while the average Mn-O bond length d(Mn-O) exhibits a minimum at R = Dy. The Substitution of R(3+) for Ca(2+) markedly enhances the electrical conductivity of parent CaMnO(3) and induces a metal-insulator transition at T(MI) which varies from 325 K to 420 K with R(3+). Among all the samples, Ca(0.9)Dy(0.1)MnO(3) shows the lowest resistivity and T(MI), mainly because of its shortest d(Mn-O) and largest effective bandwidth W. Thermally activated conductivity is, valid below T(MI), and the activation energy increases slightly with the structural distortion. All of the samples exhibit metallic-like behavior above T(MI). The measurements of magnetic susceptibility and the Seebeck coefficient indicate that the metal-insulator transition with R(3+) doping is induced by the spin-state transition of Mn(3+) ions, and the transition is strongly influenced by the crystal structure. Moreover, the observed T(MI) can be well described as a function of the structural parameters theta(Mn-O-Mn) and the A-site cation size variance sigma(2). |
原文出处 | |
公开日期 | 2012-04-13 |
源URL | [http://210.72.142.130/handle/321006/32394] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | Y. Wang,Y. Sui,J. G. Cheng,et al. High Temperature Metal-Insulator Transition Induced by Rare-Earth Doping in Perovskite CaMnO(3)[J]. Journal of Physical Chemistry C,2009,113(28):12509-12516. |
APA | Y. Wang,Y. Sui,J. G. Cheng,X. J. Wang,Z. Lu,&W. H. Su.(2009).High Temperature Metal-Insulator Transition Induced by Rare-Earth Doping in Perovskite CaMnO(3).Journal of Physical Chemistry C,113(28),12509-12516. |
MLA | Y. Wang,et al."High Temperature Metal-Insulator Transition Induced by Rare-Earth Doping in Perovskite CaMnO(3)".Journal of Physical Chemistry C 113.28(2009):12509-12516. |
入库方式: OAI收割
来源:金属研究所
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