中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High Temperature Metal-Insulator Transition Induced by Rare-Earth Doping in Perovskite CaMnO(3)

文献类型:期刊论文

作者Y. Wang ; Y. Sui ; J. G. Cheng ; X. J. Wang ; Z. Lu ; W. H. Su
刊名Journal of Physical Chemistry C
出版日期2009
卷号113期号:28页码:12509-12516
关键词electron-doped manganites neutron-diffraction thermopower oxides transport oxidation systems physics ca
ISSN号1932-7447
中文摘要This paper reports the crystal structure and high-temperature transport properties of electron-doped perovskite manganites Ca(0.9)R(0.1)MnO(3) (R = La, Pr,..., Yb). All the samples crystallized into a orthorhombic distorted perovskite structure (space group Prima). The structural distortion increases as the average A-site cation size < r(A)> decreases; the average Mn-O-Mn bond angle theta(Mn-O-Mn) monotonously decreases, while the average Mn-O bond length d(Mn-O) exhibits a minimum at R = Dy. The Substitution of R(3+) for Ca(2+) markedly enhances the electrical conductivity of parent CaMnO(3) and induces a metal-insulator transition at T(MI) which varies from 325 K to 420 K with R(3+). Among all the samples, Ca(0.9)Dy(0.1)MnO(3) shows the lowest resistivity and T(MI), mainly because of its shortest d(Mn-O) and largest effective bandwidth W. Thermally activated conductivity is, valid below T(MI), and the activation energy increases slightly with the structural distortion. All of the samples exhibit metallic-like behavior above T(MI). The measurements of magnetic susceptibility and the Seebeck coefficient indicate that the metal-insulator transition with R(3+) doping is induced by the spin-state transition of Mn(3+) ions, and the transition is strongly influenced by the crystal structure. Moreover, the observed T(MI) can be well described as a function of the structural parameters theta(Mn-O-Mn) and the A-site cation size variance sigma(2).
原文出处://WOS:000268139500073
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/32394]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Y. Wang,Y. Sui,J. G. Cheng,et al. High Temperature Metal-Insulator Transition Induced by Rare-Earth Doping in Perovskite CaMnO(3)[J]. Journal of Physical Chemistry C,2009,113(28):12509-12516.
APA Y. Wang,Y. Sui,J. G. Cheng,X. J. Wang,Z. Lu,&W. H. Su.(2009).High Temperature Metal-Insulator Transition Induced by Rare-Earth Doping in Perovskite CaMnO(3).Journal of Physical Chemistry C,113(28),12509-12516.
MLA Y. Wang,et al."High Temperature Metal-Insulator Transition Induced by Rare-Earth Doping in Perovskite CaMnO(3)".Journal of Physical Chemistry C 113.28(2009):12509-12516.

入库方式: OAI收割

来源:金属研究所

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