中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Minimal switching voltage for magnetization reversals in asymmetric nanorings

文献类型:期刊论文

作者H. Z. Xu ; X. Chen ; J. Hua ; J. M. Liu
刊名Journal of Magnetism and Magnetic Materials
出版日期2009
卷号321期号:22页码:3698-3701
关键词Spin torque Current induced magnetization switching Micromagnetic simulation
ISSN号0304-8853
中文摘要Micromagnetic simulations based on the Landau-Lifshitz-Gilbert equation are presented to study spin-polarized current induced magnetization switching in a symmetric nanoring-shaped magnetic tunnel junctions. The results show that in an a noring with an intermediate eccentric distance S, the critical switching voltage V(C) reaches the minimum whose magnitude is less than half of the voltage for a symmetric nanoring. In addition to the spin-transfer torque, the current induced Ampere ere. field is found to play a crucial part in the switching process. Analysis is given to explain the existence of such an energy valley that leads to the minimal voltage. (C) 2009 Elsevier B.V. All rights reserved.
原文出处://WOS:000269720200010
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/32457]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
H. Z. Xu,X. Chen,J. Hua,et al. Minimal switching voltage for magnetization reversals in asymmetric nanorings[J]. Journal of Magnetism and Magnetic Materials,2009,321(22):3698-3701.
APA H. Z. Xu,X. Chen,J. Hua,&J. M. Liu.(2009).Minimal switching voltage for magnetization reversals in asymmetric nanorings.Journal of Magnetism and Magnetic Materials,321(22),3698-3701.
MLA H. Z. Xu,et al."Minimal switching voltage for magnetization reversals in asymmetric nanorings".Journal of Magnetism and Magnetic Materials 321.22(2009):3698-3701.

入库方式: OAI收割

来源:金属研究所

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