Minimal switching voltage for magnetization reversals in asymmetric nanorings
文献类型:期刊论文
作者 | H. Z. Xu ; X. Chen ; J. Hua ; J. M. Liu |
刊名 | Journal of Magnetism and Magnetic Materials
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出版日期 | 2009 |
卷号 | 321期号:22页码:3698-3701 |
关键词 | Spin torque Current induced magnetization switching Micromagnetic simulation |
ISSN号 | 0304-8853 |
中文摘要 | Micromagnetic simulations based on the Landau-Lifshitz-Gilbert equation are presented to study spin-polarized current induced magnetization switching in a symmetric nanoring-shaped magnetic tunnel junctions. The results show that in an a noring with an intermediate eccentric distance S, the critical switching voltage V(C) reaches the minimum whose magnitude is less than half of the voltage for a symmetric nanoring. In addition to the spin-transfer torque, the current induced Ampere ere. field is found to play a crucial part in the switching process. Analysis is given to explain the existence of such an energy valley that leads to the minimal voltage. (C) 2009 Elsevier B.V. All rights reserved. |
原文出处 | |
公开日期 | 2012-04-13 |
源URL | [http://210.72.142.130/handle/321006/32457] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | H. Z. Xu,X. Chen,J. Hua,et al. Minimal switching voltage for magnetization reversals in asymmetric nanorings[J]. Journal of Magnetism and Magnetic Materials,2009,321(22):3698-3701. |
APA | H. Z. Xu,X. Chen,J. Hua,&J. M. Liu.(2009).Minimal switching voltage for magnetization reversals in asymmetric nanorings.Journal of Magnetism and Magnetic Materials,321(22),3698-3701. |
MLA | H. Z. Xu,et al."Minimal switching voltage for magnetization reversals in asymmetric nanorings".Journal of Magnetism and Magnetic Materials 321.22(2009):3698-3701. |
入库方式: OAI收割
来源:金属研究所
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