中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Ultrafast photovoltaic effects in miscut Nb-doped SrTiO(3) single crystals

文献类型:期刊论文

作者N. Zhou ; K. Zhao ; H. Liu ; Z. Q. Lu ; H. Zhao ; L. Tian ; W. W. Liu ; S. Q. Zhao
刊名Journal of Applied Physics
出版日期2009
卷号105期号:8
关键词high-speed optical techniques laser beam effects niobium photovoltaic effects strontium compounds films temperature transport
ISSN号0021-8979
中文摘要Picosecond photovoltaic effect in miscut Nb-doped SrTiO(3) single crystal has been observed under ultraviolet pulsed laser irradiation at ambient temperature without an applied bias. The 10%-90% rise time and the full width at half maximum are 828 and 670 ps, respectively, which is faster than that of exact cut Nb-doped SrTiO(3) single crystal. A model based on terrace structure is put forward to explain the observation.
原文出处://WOS:000268064700011
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/32621]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
N. Zhou,K. Zhao,H. Liu,et al. Ultrafast photovoltaic effects in miscut Nb-doped SrTiO(3) single crystals[J]. Journal of Applied Physics,2009,105(8).
APA N. Zhou.,K. Zhao.,H. Liu.,Z. Q. Lu.,H. Zhao.,...&S. Q. Zhao.(2009).Ultrafast photovoltaic effects in miscut Nb-doped SrTiO(3) single crystals.Journal of Applied Physics,105(8).
MLA N. Zhou,et al."Ultrafast photovoltaic effects in miscut Nb-doped SrTiO(3) single crystals".Journal of Applied Physics 105.8(2009).

入库方式: OAI收割

来源:金属研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。