Ultrafast photovoltaic effects in miscut Nb-doped SrTiO(3) single crystals
文献类型:期刊论文
作者 | N. Zhou ; K. Zhao ; H. Liu ; Z. Q. Lu ; H. Zhao ; L. Tian ; W. W. Liu ; S. Q. Zhao |
刊名 | Journal of Applied Physics
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出版日期 | 2009 |
卷号 | 105期号:8 |
关键词 | high-speed optical techniques laser beam effects niobium photovoltaic effects strontium compounds films temperature transport |
ISSN号 | 0021-8979 |
中文摘要 | Picosecond photovoltaic effect in miscut Nb-doped SrTiO(3) single crystal has been observed under ultraviolet pulsed laser irradiation at ambient temperature without an applied bias. The 10%-90% rise time and the full width at half maximum are 828 and 670 ps, respectively, which is faster than that of exact cut Nb-doped SrTiO(3) single crystal. A model based on terrace structure is put forward to explain the observation. |
原文出处 | |
公开日期 | 2012-04-13 |
源URL | [http://210.72.142.130/handle/321006/32621] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | N. Zhou,K. Zhao,H. Liu,et al. Ultrafast photovoltaic effects in miscut Nb-doped SrTiO(3) single crystals[J]. Journal of Applied Physics,2009,105(8). |
APA | N. Zhou.,K. Zhao.,H. Liu.,Z. Q. Lu.,H. Zhao.,...&S. Q. Zhao.(2009).Ultrafast photovoltaic effects in miscut Nb-doped SrTiO(3) single crystals.Journal of Applied Physics,105(8). |
MLA | N. Zhou,et al."Ultrafast photovoltaic effects in miscut Nb-doped SrTiO(3) single crystals".Journal of Applied Physics 105.8(2009). |
入库方式: OAI收割
来源:金属研究所
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