Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation
文献类型：期刊论文
| 作者 | S. B. Dun ; T. C. Lu ; Y. W. Hu ; Q. Hu ; C. F. You ; N. K. Huang |
| 刊名 | Materials Letters
 |
| 出版日期 | 2008 |
| 卷号 | 62期号:21-22页码:3617-3619 |
| 关键词 | luminescence nanocomposites surfaces neutron transmutation doping XPS TEM photoluminescence luminescence semiconductors mechanism matrices defects |
| ISSN号 | 0167-577X |
| 中文摘要 | Isotope Ge-74 ion implantation and neutron transmutation doping methods were carried out to prepare donor impurities (arsenic) doped Ge nanocrystals embedded in amorphous SiO2 film. The isotope 74 Ge atoms can react with thermal neutron and transmute to As-75 atoms, acting as donor impurities in Ge crystal. The photoluminescence intensity of donor doped Ge nanocrystals is observed increased first then decreased with increase of arsenic concentration. The non-monotonic dependence of photoluminescence on the level of doping is explained by following model: at low donor concentration, donor electrons can passivate non-radiative centers, as increasing the radiative efficiency; at high arsenic concentration, donor electrons remain free and reduce the radiative efficiency due to appearance of auger-like recombination channel. (c) 2008 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/32730]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | S. B. Dun,T. C. Lu,Y. W. Hu,et al. Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation[J]. Materials Letters,2008,62(21-22):3617-3619. |
| APA | S. B. Dun,T. C. Lu,Y. W. Hu,Q. Hu,C. F. You,&N. K. Huang.(2008).Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation.Materials Letters,62(21-22),3617-3619. |
| MLA | S. B. Dun,et al."Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation".Materials Letters 62.21-22(2008):3617-3619. |
入库方式： OAI收割
来源：金属研究所
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