Combined effects of crystallographic orientation, stacking fault energy and grain size on deformation twinning in fcc crystals
文献类型：期刊论文
| 作者 | W. Z. Han ; Z. F. Zhang ; S. D. Wu ; S. X. Li |
| 刊名 | Philosophical Magazine
 |
| 出版日期 | 2008 |
| 卷号 | 88期号:24页码:3011-3029 |
| 关键词 | equal channel angular pressing (ECAP) deformation twin FCC crystal stacking fault energy grain size copper single-crystals molecular-dynamics simulation low strain-rate room-temperature nanocrystalline al substructure development plastic-deformation texture development alloys cu |
| ISSN号 | 1478-6435 |
| 中文摘要 | The combined effects of crystallographic orientation, stacking fault energy (SFE) and grain size on deformation twinning behavior in several face-centred cubic (fcc) crystals were investigated experimentally and analytically. Three types of fcc crystals, Al single crystals, Cu single crystals and polycrystalline Cu-3% Si alloy with different SFEs and special crystallographic orientations, were selected. The orientations of the Al and Cu single crystals were designed with one of the twinning systems [image omitted] just perpendicular to the intersection plane of equal-channel angular pressing (ECAP). For Al single crystals, no deformation twins were observed after a one-pass ECAP, although a preferential crystallographic orientation was selected for twinning. For Cu single crystals, numerous deformation twins were found even when strained at room temperature and at low strain rate. For Cu-3% Si alloy, deformation twins were only observed in some grains; however, others with different orientations were full of dislocations, although it has the lowest SFE value of the three fcc crystal types. The experimental results provide evidence that SFE and crystallographic orientation have a remarkable influence on the behavior of deformation twinning in fcc crystals. The observations were subsequently analyzed based on fundamental dislocation mechanisms and the grain-size effect. The deformation conditions required for twinning and the variation in twinning stress with SFE, crystallographic orientation and grain size in fcc crystals are also discussed. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/32794]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | W. Z. Han,Z. F. Zhang,S. D. Wu,et al. Combined effects of crystallographic orientation, stacking fault energy and grain size on deformation twinning in fcc crystals[J]. Philosophical Magazine,2008,88(24):3011-3029. |
| APA | W. Z. Han,Z. F. Zhang,S. D. Wu,&S. X. Li.(2008).Combined effects of crystallographic orientation, stacking fault energy and grain size on deformation twinning in fcc crystals.Philosophical Magazine,88(24),3011-3029. |
| MLA | W. Z. Han,et al."Combined effects of crystallographic orientation, stacking fault energy and grain size on deformation twinning in fcc crystals".Philosophical Magazine 88.24(2008):3011-3029. |
入库方式： OAI收割
来源：金属研究所
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