中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Analysis of microstructure of silicon carbide fiber by Raman spectroscopy

文献类型:期刊论文

作者B. H. Jin ; N. L. Shi
刊名Journal of Materials Science & Technology
出版日期2008
卷号24期号:2页码:261-264
关键词Raman spectra optical phonon SiC fiber carbon content sic polytypes carbon-films scattering graphite spectrum
ISSN号1005-0302
中文摘要The SiC fiber was prepared by chemical vapour depostion, which consists of tungsten core, SiC layer and carbon coating. The microstructure of the fiber was investigated using Raman spectroscopy, illustrating SiC variation in different region of the fiber. The result shows that the SiC layer can be subdivided into two parts in the morphologies of SiC grains; their sizes increase and their orientations become order with increasing distance from the fiber center. It is demonstrated that the mount of free carbon in the fiber is responsible for the variation of SiC grains in sizes and morphologies. The analysis of Raman spectra shows that the predominant beta-SiC has extensive stacking faults within the crystallites and mixes other polytypes and amorphous SiC into the structure in the fiber.
原文出处://WOS:000254637200025
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/32849]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
B. H. Jin,N. L. Shi. Analysis of microstructure of silicon carbide fiber by Raman spectroscopy[J]. Journal of Materials Science & Technology,2008,24(2):261-264.
APA B. H. Jin,&N. L. Shi.(2008).Analysis of microstructure of silicon carbide fiber by Raman spectroscopy.Journal of Materials Science & Technology,24(2),261-264.
MLA B. H. Jin,et al."Analysis of microstructure of silicon carbide fiber by Raman spectroscopy".Journal of Materials Science & Technology 24.2(2008):261-264.

入库方式: OAI收割

来源:金属研究所

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