Formation of Ga dimer linear chains on Si(001): a first-principles study
文献类型:期刊论文
作者 | E. Z. Liu ; J. T. Wang ; C. Y. Wang ; J. Z. Jiang |
刊名 | Journal of Physics-Condensed Matter
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出版日期 | 2008 |
卷号 | 20期号:44 |
关键词 | low-coverage si(100) growth surface al adsorption energy phases |
ISSN号 | 0953-8984 |
中文摘要 | Using first-principles total-energy calculations, we have systematically investigated the adsorption and diffusion of Ga dimers on Si(001) to form dimer linear chains (DLC) perpendicular to the surface dimer rows. We find that Ga dimers prefer forming DLC on Si(001) both energetically and kinetically with an anisotropy diffusing pathway, and the energy barriers for Ga dimers diffusing across or along the surface dimer rows along certain paths can be significantly reduced by the interaction of Ga dimers. As a result, Ga dimers can easily diffuse into the most stable sites to form one-dimensional DLC. These results reveal a natural explanation for the relevant experimental observation. |
原文出处 | |
公开日期 | 2012-04-13 |
源URL | [http://210.72.142.130/handle/321006/32934] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | E. Z. Liu,J. T. Wang,C. Y. Wang,et al. Formation of Ga dimer linear chains on Si(001): a first-principles study[J]. Journal of Physics-Condensed Matter,2008,20(44). |
APA | E. Z. Liu,J. T. Wang,C. Y. Wang,&J. Z. Jiang.(2008).Formation of Ga dimer linear chains on Si(001): a first-principles study.Journal of Physics-Condensed Matter,20(44). |
MLA | E. Z. Liu,et al."Formation of Ga dimer linear chains on Si(001): a first-principles study".Journal of Physics-Condensed Matter 20.44(2008). |
入库方式: OAI收割
来源:金属研究所
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