中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Formation of Ga dimer linear chains on Si(001): a first-principles study

文献类型:期刊论文

作者E. Z. Liu ; J. T. Wang ; C. Y. Wang ; J. Z. Jiang
刊名Journal of Physics-Condensed Matter
出版日期2008
卷号20期号:44
关键词low-coverage si(100) growth surface al adsorption energy phases
ISSN号0953-8984
中文摘要Using first-principles total-energy calculations, we have systematically investigated the adsorption and diffusion of Ga dimers on Si(001) to form dimer linear chains (DLC) perpendicular to the surface dimer rows. We find that Ga dimers prefer forming DLC on Si(001) both energetically and kinetically with an anisotropy diffusing pathway, and the energy barriers for Ga dimers diffusing across or along the surface dimer rows along certain paths can be significantly reduced by the interaction of Ga dimers. As a result, Ga dimers can easily diffuse into the most stable sites to form one-dimensional DLC. These results reveal a natural explanation for the relevant experimental observation.
原文出处://WOS:000260028500003
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/32934]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
E. Z. Liu,J. T. Wang,C. Y. Wang,et al. Formation of Ga dimer linear chains on Si(001): a first-principles study[J]. Journal of Physics-Condensed Matter,2008,20(44).
APA E. Z. Liu,J. T. Wang,C. Y. Wang,&J. Z. Jiang.(2008).Formation of Ga dimer linear chains on Si(001): a first-principles study.Journal of Physics-Condensed Matter,20(44).
MLA E. Z. Liu,et al."Formation of Ga dimer linear chains on Si(001): a first-principles study".Journal of Physics-Condensed Matter 20.44(2008).

入库方式: OAI收割

来源:金属研究所

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