中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
In situ electrical measurements of polytypic silver nanowires

文献类型:期刊论文

作者X. H. Liu ; J. Zhu ; C. H. Jin ; L. M. Peng ; D. M. Tang ; H. M. Cheng
刊名Nanotechnology
出版日期2008
卷号19期号:8
关键词thin metallic-films electromigration semiconductor conductivity stress growth
ISSN号0957-4484
中文摘要Novel 4H structure silver nanowires (4H-AgNWs) have been reported to coexist with the usual face-centered cubic (FCC) ones. Here we report the electrical properties of these polytypic AgNWs for the first time. AgNWs with either 4H or FCC structures in the diameter range of 20-80 nm were measured in situ inside a transmission electron microscope (TEM). Both kinds of AgNW in the diameter range show metallic conductance. The average resistivity of the 4H-AgNWs is 19.9 mu Omega cm, comparable to the 11.9 mu Omega cm of the FCC-AgNWs. The failure current density can be up to similar to 10(8) A cm(-2) for both 4H- and FCC-AgNWs. The maximum stable current density (MSCD) is introduced to estimate the AgNWs' current-carrying ability, which shows diameter-dependence with a peak around 34 nm in diameter. It is attributed to fast annihilation of the current-induced vacancies and the enhanced surface scattering. Our investigations also suggest that the magnetic field of the electromagnetic lens may also introduce some influence on the measurements inside the TEM.
原文出处://WOS:000252967400025
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/32979]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
X. H. Liu,J. Zhu,C. H. Jin,et al. In situ electrical measurements of polytypic silver nanowires[J]. Nanotechnology,2008,19(8).
APA X. H. Liu,J. Zhu,C. H. Jin,L. M. Peng,D. M. Tang,&H. M. Cheng.(2008).In situ electrical measurements of polytypic silver nanowires.Nanotechnology,19(8).
MLA X. H. Liu,et al."In situ electrical measurements of polytypic silver nanowires".Nanotechnology 19.8(2008).

入库方式: OAI收割

来源:金属研究所

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