In situ electrical measurements of polytypic silver nanowires
文献类型:期刊论文
作者 | X. H. Liu ; J. Zhu ; C. H. Jin ; L. M. Peng ; D. M. Tang ; H. M. Cheng |
刊名 | Nanotechnology
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出版日期 | 2008 |
卷号 | 19期号:8 |
关键词 | thin metallic-films electromigration semiconductor conductivity stress growth |
ISSN号 | 0957-4484 |
中文摘要 | Novel 4H structure silver nanowires (4H-AgNWs) have been reported to coexist with the usual face-centered cubic (FCC) ones. Here we report the electrical properties of these polytypic AgNWs for the first time. AgNWs with either 4H or FCC structures in the diameter range of 20-80 nm were measured in situ inside a transmission electron microscope (TEM). Both kinds of AgNW in the diameter range show metallic conductance. The average resistivity of the 4H-AgNWs is 19.9 mu Omega cm, comparable to the 11.9 mu Omega cm of the FCC-AgNWs. The failure current density can be up to similar to 10(8) A cm(-2) for both 4H- and FCC-AgNWs. The maximum stable current density (MSCD) is introduced to estimate the AgNWs' current-carrying ability, which shows diameter-dependence with a peak around 34 nm in diameter. It is attributed to fast annihilation of the current-induced vacancies and the enhanced surface scattering. Our investigations also suggest that the magnetic field of the electromagnetic lens may also introduce some influence on the measurements inside the TEM. |
原文出处 | |
公开日期 | 2012-04-13 |
源URL | [http://210.72.142.130/handle/321006/32979] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | X. H. Liu,J. Zhu,C. H. Jin,et al. In situ electrical measurements of polytypic silver nanowires[J]. Nanotechnology,2008,19(8). |
APA | X. H. Liu,J. Zhu,C. H. Jin,L. M. Peng,D. M. Tang,&H. M. Cheng.(2008).In situ electrical measurements of polytypic silver nanowires.Nanotechnology,19(8). |
MLA | X. H. Liu,et al."In situ electrical measurements of polytypic silver nanowires".Nanotechnology 19.8(2008). |
入库方式: OAI收割
来源:金属研究所
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