中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electronic structure and chemical bonding of alpha- and beta-Ta(4)AlC(3) phases: Full-potential calculation

文献类型:期刊论文

作者W. Lu ; X. H. Deng ; H. Wang ; H. T. Huang ; L. L. He
刊名Journal of Materials Research
出版日期2008
卷号23期号:9页码:2350-2356
关键词ti3sic2 ta4alc3 polymorphism deformation carbides ti4aln3 density
ISSN号0884-2914
中文摘要First-principles total-energy and heat of formation calculations oil alpha and beta polymorphs of Ta(4)AlC(3) have been made with a full-potential electronic structure program with the generalized gradient approximation, which shows that a phase is more stable than beta phase. The charge transfer and chemical bonding of the two phases were investigated quantitatively by using Bader's quantum theory of atoms in molecules (AIM). The results show that the bonding between Tal-C2 is stronger in alpha phase than beta phase, which leads to the stability of alpha phase.
原文出处://WOS:000259515900009
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/32999]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
W. Lu,X. H. Deng,H. Wang,et al. Electronic structure and chemical bonding of alpha- and beta-Ta(4)AlC(3) phases: Full-potential calculation[J]. Journal of Materials Research,2008,23(9):2350-2356.
APA W. Lu,X. H. Deng,H. Wang,H. T. Huang,&L. L. He.(2008).Electronic structure and chemical bonding of alpha- and beta-Ta(4)AlC(3) phases: Full-potential calculation.Journal of Materials Research,23(9),2350-2356.
MLA W. Lu,et al."Electronic structure and chemical bonding of alpha- and beta-Ta(4)AlC(3) phases: Full-potential calculation".Journal of Materials Research 23.9(2008):2350-2356.

入库方式: OAI收割

来源:金属研究所

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