中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Controllable Synthesis of Vertically Aligned p-Type GaN Nanorod Arrays on n-Type Si Substrates for Heterojunction Diodes

文献类型:期刊论文

作者Y. B. Tang ; X. H. Bo ; C. S. Lee ; H. T. Cong ; H. M. Cheng ; Z. H. Chen ; W. J. Zhang ; I. Bello ; S. T. Lee
刊名Advanced Functional Materials
出版日期2008
卷号18期号:21页码:3515-3522
关键词light-emitting-diodes molecular-beam epitaxy sensitized solar-cells zno nanowire arrays carbon nanotubes field-emission piezoelectric nanogenerators controlled growth junction diodes laser-diodes
ISSN号1616-301X
中文摘要A new catalyst seeding method is presented, in which aerosolized catalyst nanoparticles are continuously self-assembled onto amine-terminated silicon substrates in gas phase to realize controllable synthesis of vertically aligned Mg-doped GaN nanorod arrays on n-type Si (111) substrates. The diameter, areal density, and length of GaN nanorods can be controlled by adjusting the size of Au nanoparticles, flowing time of Au nanoparticles, and growth time, respectively. Based on the synthesis of p-type GaN nanorods on n-type Si substrates, p-GaN nanorod/n-Si heterojunction diodes are fabricated, which exhibit well-defined rectifying behavior with a low turn-on voltage of similar to 1.0 V and a low leakage current even at a reverse bias up to 10 V. The controllable growth of GaN nanorod arrays and the realization of p-type GaN nanorod/n-type Si heterojunction diodes open up opportunities for low-cost and high-performance optoelectronic devices based on these nanostructured arrays.
原文出处://WOS:000261198200021
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/33100]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Y. B. Tang,X. H. Bo,C. S. Lee,et al. Controllable Synthesis of Vertically Aligned p-Type GaN Nanorod Arrays on n-Type Si Substrates for Heterojunction Diodes[J]. Advanced Functional Materials,2008,18(21):3515-3522.
APA Y. B. Tang.,X. H. Bo.,C. S. Lee.,H. T. Cong.,H. M. Cheng.,...&S. T. Lee.(2008).Controllable Synthesis of Vertically Aligned p-Type GaN Nanorod Arrays on n-Type Si Substrates for Heterojunction Diodes.Advanced Functional Materials,18(21),3515-3522.
MLA Y. B. Tang,et al."Controllable Synthesis of Vertically Aligned p-Type GaN Nanorod Arrays on n-Type Si Substrates for Heterojunction Diodes".Advanced Functional Materials 18.21(2008):3515-3522.

入库方式: OAI收割

来源:金属研究所

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