Vertically Aligned p-Type Single-Crystalline GaN Nanorod Arrays on n-Type Si for Heterojunction Photovoltaic Cells
文献类型：期刊论文
| 作者 | Y. B. Tang ; Z. H. Chen ; H. S. Song ; C. S. Lee ; H. T. Cong ; H. M. Cheng ; W. J. Zhang ; I. Bello ; S. T. Lee |
| 刊名 | Nano Letters
 |
| 出版日期 | 2008 |
| 卷号 | 8期号:12页码:4191-4195 |
| 关键词 | sensitized solar-cells light-emitting-diodes molecular-beam epitaxy tio2 nanotube arrays nanowire arrays controlled growth silicon heterostructures nanodevices route |
| ISSN号 | 1530-6984 |
| 中文摘要 | Vertically aligned Mg-doped GaN nanorods have been epitaxially grown on n-type Si substrate to form a heterostructure for fabricating p-n heterojunction photovoltaic cells. The p-type GaN nanorod/n-Si heterojunction cell shows a well-defined rectifying behavior with a rectification ratio larger than 10(4) in dark. The cell has a high short-circuit photocurrent density of 7.6 mA/cm(2) and energy conversion efficiency of 2.73% under AM 1.5G illumination at 100 mW/cm(2). Moreover, the nanorod array may be used as an antireflection coating for solar cell applications to effectively reduce light loss due to reflection. This study provides an experimental demonstration for integrating one-dimensional nanostructure arrays with the substrate to directly fabricate heterojunction photovoltaic cells. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/33101]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Y. B. Tang,Z. H. Chen,H. S. Song,et al. Vertically Aligned p-Type Single-Crystalline GaN Nanorod Arrays on n-Type Si for Heterojunction Photovoltaic Cells[J]. Nano Letters,2008,8(12):4191-4195. |
| APA | Y. B. Tang.,Z. H. Chen.,H. S. Song.,C. S. Lee.,H. T. Cong.,...&S. T. Lee.(2008).Vertically Aligned p-Type Single-Crystalline GaN Nanorod Arrays on n-Type Si for Heterojunction Photovoltaic Cells.Nano Letters,8(12),4191-4195. |
| MLA | Y. B. Tang,et al."Vertically Aligned p-Type Single-Crystalline GaN Nanorod Arrays on n-Type Si for Heterojunction Photovoltaic Cells".Nano Letters 8.12(2008):4191-4195. |
入库方式： OAI收割
来源：金属研究所
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